Analysis of Sputtered Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

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Characteristics of Zinc Oxide Film Prepared by Chemical Bath Deposition Method

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.602-603.871 ◽

2014 ◽

Vol 602-603 ◽

pp. 871-875

Author(s):

Yen Pei Fu ◽

Jian Jhih Chen

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Chemical Bath Deposition ◽

Deposition Time ◽

Oxide Films ◽

Hexagonal Structure ◽

Zno Films ◽

Zinc Oxide Film ◽

Incident Wavelength ◽

Zinc Oxide Films

In this study, ZnO films, prepared by Chemical Bath Deposition (CBD), are applied as the conductive layers for thin film solar cells. Zinc acetate is used as a source of zinc, and different proportions of ammonia solution are added and well mixed. The growth of zinc oxide films in reaction solutions is taken place at 80°C and then heated to 500°C for one hour. In this study, the different ammonia concentrations and deposition times is controlled. The thin film structure is Hexagonal structure, which is determined by X-ray diffraction spectrometer (XRD) analysis. Scanning electron microscopy (SEM) is used as the observation of surface morphology, the bottom of the film is the interface where the heterogeneous nucleation happens. With the increase of deposition time, there were a few attached zinc oxide particles, which is formed by homogeneous nucleation. According to UV / visible light (UV / Vis) absorption spectrometer transmittance measurements and the relationship between/among the incident wavelength, it can be converted to the energy gaps (Eg), which are about 3.0 to 3.2eV, by using fluorescence spectroscopy analysis. The emission of zinc oxide films has two wavelengths which are located on 510nm and 570nm. According to Based on the all analytic results, the ammonia concentration at 0.05M, and the deposition time is 120 minutes, would obtain the conditions of ZnO films which is more suitable for applications of conductive layer material in thin film solar cell.

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Effect of RF power of Al2O3 target on the physical properties of aluminum-doped zinc oxide films

Applied Physics A ◽

10.1007/s00339-020-04021-3 ◽

2020 ◽

Vol 126 (11) ◽

Author(s):

Mohamed Fathy Hasaneen ◽

M. M. Abd El-Raheem ◽

Mahrous R. Ahmed

Keyword(s):

Zinc Oxide ◽

Physical Properties ◽

Oxide Films ◽

Rf Power ◽

Zinc Oxide Films ◽

Aluminum Doped Zinc Oxide

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Effect of RF power on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Chinese Physics ◽

10.1088/1009-1963/16/2/044 ◽

2007 ◽

Vol 16 (2) ◽

pp. 548-552 ◽

Cited By ~ 9

Author(s):

Lü Mao-Shui ◽

Pang Zhi-Yong ◽

Xiu Xian-Wu ◽

Dai Ying ◽

Han Sheng-Hao

Keyword(s):

Zinc Oxide ◽

Magnetron Sputtering ◽

Oxide Films ◽

Rf Magnetron Sputtering ◽

Rf Power ◽

Zinc Oxide Films ◽

Transparent Conducting

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SYNTHESIS AND OPTICAL PROPERTIES OF Ni-DOPED ZnO GROWN BY ELECTROCHEMICAL DEPOSITION

Doklady BGUIR ◽

10.35596/1729-7648-2020-18-2-37-44 ◽

2020 ◽

Vol 18 (2) ◽

pp. 37-44

Author(s):

K. O. Yanushkevich ◽

E. B. Chubenko ◽

V. P. Bondarenko

Keyword(s):

Zinc Oxide ◽

Raman Scattering ◽

Electrochemical Deposition ◽

Current Density ◽

Oxide Films ◽

Measuring System ◽

Zno Films ◽

Photoluminescence Spectra ◽

Zinc Oxide Films ◽

Doped Zno

This paper is targeted at studying the patterns of deposition by electrochemical method of Ni-doped ZnO films, including registering and analyzing their photoluminescence and Raman scattering spectra. We have studied the electrochemical deposition of nickel-doped zinc oxide films on single-crystal silicon substrates from aqueous solutions of zinc and nickel nitrates. The deposition was conducted from aqua solutions of Zn and Ni nitrates in a standard double-electrode electrochemical cell in galvanostatic mode with the current density from 5 to 20 mA/cm2 and deposition time from 5 to 30 min. The Raman scattering on nickel-doped zinc oxide films was examined via laser Raman spectrometer SOL Instruments Confotec NR500. The analysis of Raman spectra showed that an increase of cathodic current density deposition leads to an enhanced concentration of a doping agent in the films. Photoluminescence spectra of the samples were registered on a laser spectral measuring system based on monochromator-spectrograph SOLAR TII MS 7504i where a monochromatic line with the 345-nm wavelength, which was extracted from the spectrum of Xe-lamp by means of double monochromator Solar TII DM160, was used as the excitation source. The research demonstrates that the emmission intensity increases with the thickness of the deposited film, and the position of maximums of the radiation line remains unchanged in a visible wavelength range and on photoluminescence spectra with fixed current density. The change in the density of the cathode current leads to a shift in the position of the photoluminescence spectra maximum, which indicates restructuring of defects and dopant atoms in the doped semiconductor, which in turn changes the position of the corresponding levels in the band gap of the material.

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Etch characteristics and defect structure in sputtered zinc oxide films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074586 ◽

1983 ◽

Vol 41 ◽

pp. 150-151

Author(s):

F.S. Hickernell ◽

T.S. Hickernell

Keyword(s):

Zinc Oxide ◽

Single Crystal ◽

Defect Structure ◽

Oxide Films ◽

Zno Films ◽

Optical Wave ◽

Zinc Oxide Films ◽

Propagation Losses ◽

Amorphous Substrates ◽

Etch Rates

Sputtered zinc oxide films are used in the fabrication of acoustical and optical microelectronic devices. The ZnO deposits as a fine grain C-axis oriented polycrystalline film on amorphous substrates with piezoelectric and electro-optic properties approaching single crystal material. Different sputtering techniques have yielded different levels of performance particularly with respect to surface acoustic wave, SAW, and guided optical wave, GOW, propagation characteristics. Etching studies have shown that rapid etch rates are associated with lower velocities and higher propagation losses whereas slow etch rates yield films with near single crystal velocities and low propagation losses. In this investigation partially etched ZnO films were examined using a scanning electron microscope to determine the microstructural changes. This has led to a more detailed understanding of the defect structure of the films, the nature of the etch process and its relation to the etch characteristics of single crystal ZnO.

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Morphology control of zinc oxide films via polysaccharide-mediated, low temperature, chemical bath deposition

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.6.83 ◽

2015 ◽

Vol 6 ◽

pp. 799-808 ◽

Cited By ~ 2

Author(s):

Florian Waltz ◽

Hans-Christoph Schwarz ◽

Andreas M Schneider ◽

Stefanie Eiden ◽

Peter Behrens

Keyword(s):

Electrical Conductivity ◽

Zinc Oxide ◽

Hyaluronic Acid ◽

Low Temperature ◽

Chemical Bath Deposition ◽

Oxide Films ◽

Optimal Growth ◽

Zno Films ◽

Dense Layer ◽

Zinc Oxide Films

In this study we present a three-step process for the low-temperature chemical bath deposition of crystalline ZnO films on glass substrates. The process consists of a seeding step followed by two chemical bath deposition steps. In the second step (the first of the two bath deposition steps), a natural polysaccharide, namely hyaluronic acid, is used to manipulate the morphology of the films. Previous experiments revealed a strong influence of this polysaccharide on the formation of zinc oxide crystallites. The present work aims to transfer this gained knowledge to the formation of zinc oxide films. The influence of hyaluronic acid and the time of its addition on the morphology of the resulting ZnO film were investigated. By meticulous adjustment of the parameters in this step, the film morphology can be tailored to provide an optimal growth platform for the third step (a subsequent chemical bath deposition step). In this step, the film is covered by a dense layer of ZnO. This optimized procedure leads to ZnO films with a very high electrical conductivity, opening up interesting possibilities for applications of such films. The films were characterized by means of electron microscopy, X-ray diffraction and measurements of the electrical conductivity.

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X-ray diffraction and photoluminescence studies of zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering

Powder Diffraction ◽

10.1154/1.2903496 ◽

2008 ◽

Vol 23 (S1) ◽

pp. S94-S97 ◽

Cited By ~ 3

Author(s):

G. Juárez-Díaz ◽

H. Solache-Carranco ◽

G. Romero-Paredes R. ◽

R. Peña-Sierra ◽

J. Martínez-Juárez ◽

...

Keyword(s):

Zinc Oxide ◽

Magnetron Sputtering ◽

Reactive Magnetron Sputtering ◽

Zno Films ◽

Silicon Substrates ◽

Reactive Magnetron ◽

X Ray Diffraction ◽

X Ray ◽

Zinc Oxide Films ◽

Dc Reactive Magnetron Sputtering

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.

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