Possibility of rapid determination of low-level 90Sr activity by combination of extraction chromatography separation and Cherenkov counting

1999 ◽  
Vol 399 (3) ◽  
pp. 237-247 ◽  
Author(s):  
Ž. Grahek ◽  
N. Zečević ◽  
S. Lulić
1994 ◽  
Vol 45 (2) ◽  
pp. 251-256 ◽  
Author(s):  
Chu-Fang Wang ◽  
Jeng-Horng Lee ◽  
Horng-Jye Chiou

2015 ◽  
Vol 21 (1) ◽  
pp. 1-6 ◽  
Author(s):  
Zhanglin Ni ◽  
Fubin Tang ◽  
Yihua Liu ◽  
Danyu Shen ◽  
Runhong Mo

Author(s):  
T. Y. Tan ◽  
W. K. Tice

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.


2017 ◽  
Vol 45 (2) ◽  
pp. 455-464
Author(s):  
T.T. Xue ◽  
J. Liu ◽  
Y.B. Shen ◽  
G.Q. Liu

Sign in / Sign up

Export Citation Format

Share Document