In-Process Measurement Method for Detection and Discrimination of Silicon Wafer Surface Defects by Laser Scattered Defect Pattern

CIRP Annals ◽  
1998 ◽  
Vol 47 (1) ◽  
pp. 459-462 ◽  
Author(s):  
Satoru Takahashi ◽  
Takashi Miyoshi ◽  
Yasuhiro Takaya ◽  
Katsumasa Saito
2000 ◽  
Author(s):  
Satoru Takahashi ◽  
Takashi Miyoshi ◽  
Yasuhiro Takaya

Abstract A new optical measurement method for evaluating the defects on silicon wafer surfaces quantitatively, applicable to in-process measurement, is presented. The experimental system for measuring the defects consists of a Fourier transform optical system using a high-power objective lens. In order to verify the feasibility of the applications of this method to automatic in-process measurement, a two-stage measurement for detecting and evaluating small particles, which are typical defects on silicon wafer surfaces, was carried out. The results showed that the proposed two-stage measurement method is effective for measuring small defects in the sub-micro meter scale size.


1998 ◽  
Vol 145 (1) ◽  
pp. 275-284 ◽  
Author(s):  
D. Gräf ◽  
M. Suhren ◽  
U. Lambert ◽  
R. Schmolke ◽  
A. Ehlert ◽  
...  

Author(s):  
Ritsuo Takizawa ◽  
Toshiro Nakanishi ◽  
Kouichirou Honda ◽  
Akira Ohsawa

2002 ◽  
Vol 2002 (0) ◽  
pp. 275-276
Author(s):  
Naoko SAITO ◽  
Kazushige KIKUTA ◽  
Yukio HISHINUMA ◽  
Takemi CHIKAHISA ◽  
Toshimitsu MIYATA ◽  
...  

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