Synthetic semiconductor diamond electrodes: a study of electrochemical behavior of boron-doped single crystals grown at a high temperature and high pressure

1999 ◽  
Vol 44 (19) ◽  
pp. 3361-3366 ◽  
Author(s):  
Yu.V Pleskov ◽  
Yu.E Evstefeeva ◽  
M.D Krotova ◽  
A.V Laptev
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystals ◽  
Electrochemical Behavior ◽  
Diamond Electrodes ◽  
Boron Doped ◽  
Semiconductor Diamond

Electrochemical Behavior of Nicotine Studied by Voltammetric Techniques at Boron‐Doped Diamond Electrodes

2005 ◽  
Vol 38 (10) ◽  
pp. 1587-1599 ◽  
Author(s):  
H. B. Suffredini ◽  
M. C. Santos ◽  
D. De Souza ◽  
L. Codognoto ◽  
P. Homem‐de‐Mello ◽  
...  
Keyword(s):  
Electrochemical Behavior ◽  
Diamond Electrodes ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Voltammetric Techniques

Notizen: Einkristall-Daten der Hochdruck-Hochtemperaturphase von CaSi2 / Structural Refinement of the High Pressure-High Temperature Phase of CaSi2

1982 ◽  
Vol 37 (11) ◽  
pp. 1487-1488 ◽  
Author(s):  
Jürgen Evers ◽  
Gilbert Oehlinger ◽  
Armin Weiss
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystals ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Structural Refinement ◽  
Interatomic Distances ◽  
High Pressure High Temperature

The high pressure-high temperature phase of CaSi2 is a representative of the α-ThSi2 type of structure. Single crystals grown at 40 kbar and 1000 °C enabled a structural refinement which leads to interatomic distances Si-Si: 229.9(1) pm (1 × ) and 240.0(1) pm (2 × ), Ca-Si: 309.4(4) pm (4 x ) and 323.9(4) pm (8 × ), Ca-Ca: 400.3(3) pm (4 × ) and 428.3(3) pm (4 × ).

Electrochemical Behavior of Boron‐Doped Diamond Electrodes

1996 ◽  
Vol 143 (10) ◽  
pp. L238-L240 ◽  
Author(s):  
N. Vinokur ◽  
B. Miller ◽  
Y. Avyigal ◽  
R. Kalish
Keyword(s):  
Electrochemical Behavior ◽  
Diamond Electrodes ◽  
Boron Doped Diamond ◽  
Boron Doped

Crystal structures and high-temperature vibrational spectra for synthetic boron and aluminum doped hydrous coesite

2020 ◽  
Author(s):  
Yu Ye ◽  
Yunfan Miao ◽  
Joseph R. Smyth ◽  
Junfeng Zhang
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystals ◽  
Vibrational Spectra ◽  
Fourier Transformation ◽  
Ambient Pressure ◽  
Al Content ◽  
Al Substitution ◽  
Long Time

<p>Coesite, a high-pressure SiO2 polymorph, has drawn extensive interest from the mineralogical community for a long time. In this study, we synthesized hydrous coesite samples with different B and Al concentrations at 5 and 7.5 GPa (1273 K). The B concentration could be more than 400 B/10<sup>6</sup>Si with about 300 ppmw. H2O, while the Al content can be as much as 1200 ~ 1300 Al/10<sup>6</sup>Si with CH2O restrained to be less than 10 ppmw. Hence, B-substitution may prefer the mechanism of Si<sup>4+</sup> = B<sup>3+</sup> + H<sup>+</sup>, whereas Al-substitution could be dominated by 2Si<sup>4+</sup> = 2Al<sup>3+</sup> + O<sub>V</sub>. The doped B<sup>3+</sup> and Al<sup>3+</sup> cations may be concentrated in the Si1 and Si2 tetrahedra, respectively, and make noticeable changes in the Si-O4 and Si-O5 bond lengths. In-situ high-temperature Raman and Fourier Transformation Infrared (FTIR) spectra were collected at ambient pressure. The single crystals of coesite were observed to be stable up to 1500 K. The isobaric Grüneisen parameters (ϒ<sub>i<em>P</em></sub>) of the external modes (< 350 cm<sup>-1</sup>) are systematically smaller in the Al-doped samples, as compared with those for the Al-free ones, while most of the OH-stretching bands shift to higher frequencies in the high temperature range up to ~ 1100 K</p>

Millimeter-sized sodalite single crystals grown under high-temperature, high-pressure hydrothermal conditions

2001 ◽  
Vol 42 (2-3) ◽  
pp. 229-234 ◽  
Author(s):  
Tsuyoshi Shiraki ◽  
Toru Wakihara ◽  
Masayoshi Sadakata ◽  
Masahiro Yoshimura ◽  
Tatsuya Okubo
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystals ◽  
Hydrothermal Conditions ◽  
High Temperature High Pressure

Observation of etch pits and defects in diamond single crystals prepared under high temperature–high pressure

2001 ◽  
Vol 315 (1-2) ◽  
pp. 108-112 ◽  
Author(s):  
Long-Wei Yin ◽  
Mu-Sen Li ◽  
Dong-Sheng Sun ◽  
Zhao-Yin Hao ◽  
Feng-Zhao Li ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Single Crystals ◽  
Etch Pits ◽  
Diamond Single Crystals ◽  
High Temperature High Pressure
Sign in / Sign up

Export Citation Format

Share Document