X-ray photoelectron spectroscopy study of cubic boron nitride single crystals grown under high pressure and high temperature

2012 ◽  
Vol 258 (8) ◽  
pp. 3800-3804 ◽  
Author(s):  
Lixin Hou ◽  
Zhanguo Chen ◽  
Xiuhuan Liu ◽  
Yanjun Gao ◽  
Gang Jia
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Cubic Boron Nitride ◽  
Spectroscopy Study ◽  
X Ray

scholarly journals Analysis of Cubic Boron Nitride Single Crystal Defects Growth under High Temperature and High Pressure

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Lichao Cai ◽  
Bin Xu ◽  
Meizhe Lv ◽  
Feng Jia ◽  
Xingdong Yuan
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Single Crystals ◽  
Growth Mechanism ◽  
Cubic Boron Nitride ◽  
Crystal Defects ◽  
Synthetic Process ◽  
Growth Defects ◽  
Hole Defects

Cubic boron nitride (cBN) single crystals are synthesized under high temperature and high pressure in the Li-based system. The growth defects on hexagonal and triangular (111) surfaces of cBN single crystals after rapid cooling are discussed systemically for the first time using the atomic force microscope. Some impurity particles, triangle cone hole defects, lamellar-fault structures, and big steps are obvious on the surfaces of cBN single crystals. The formation mechanism of these defects is analyzed briefly at the synthetic process of cBN single crystals, and the growth mechanism of cBN single crystals transform from the two-dimensional growth to dislocation growth mechanism under high temperature and high pressure.

High Pressure and High Temperature Sintered PcBN Using Al, B4C and C as Sintering Additive

2016 ◽  
Vol 697 ◽  
pp. 521-525 ◽  
Author(s):  
Yao Ma ◽  
Jian Li ◽  
Hai Long Wang ◽  
Rui Zhang
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
High Strength ◽  
X Ray Diffraction ◽  
X Ray ◽  
Polycrystalline Cubic Boron Nitride ◽  
Starting Mixture ◽  
Sintering Additive

Polycrystalline cubic boron nitride (PcBN) composites were sintered by high pressure and high temperature sintering (HPHT) at 1450 °C for 3 min under a pressure of 5.0 GPa. Aluminium,boron carbide and carbon in the starting mixture reacts with cubic boron nitride (cBN) to form Al3BC3 and AlN bonding among cBN grains during sintering. X-ray diffraction (XRD) and Scanning electron microscope (SEM) were used to analyze phases and micro-structure of the sintered samples. The dense structure of super hard cBN grains bonded together with Al3BC3 and AlN offers superior hardness and high strength. The Vickers hardness of PcBN composites was 45±5 GPa, and the strength of PcBN composites was 345±15 MPa.

Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure

2002 ◽  
Vol 81 (22) ◽  
pp. 4145-4147 ◽  
Author(s):  
T. Taniguchi ◽  
K. Watanabe ◽  
S. Koizumi ◽  
I. Sakaguchi ◽  
T. Sekiguchi ◽  
...  
Keyword(s):  
High Pressure ◽  
Boron Nitride ◽  
Single Crystals ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Cubic Boron Nitride ◽  
Self Organized ◽  
Bulk Single Crystals

Cubic Boron Nitride as a New Semiconductor for Optoelectronics: Luminescence Properties and Potentialities

1989 ◽  
Vol 162 ◽  
Author(s):  
Koh Era ◽  
Osamu Mishima
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Boron Nitride ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Visible Region ◽  
Vibrational Structure ◽  
Luminescence Properties ◽  
Optoelectronic Applications ◽  
P Type

ABSTRACTIn cubic boron nitride made by high pressure and high temperature technique in our institute, we have found three luminescence bands in the ultraviolet and the short visible region at room temperature by cathode-ray excitation. They are: a band having vibrational structure and ascribable to undoped state of the crystal, a band ascribable to p-type doping and a band ascribable to n-type doping. Discussion is made on differences between the injection luminescence and the cathodoluminescence. Potentialities and difficulties in realizing the potentialities of cBN for optoelectronic applications are discussed.

scholarly journals Superhard Superconductor Composites Obtained by Sintering of Diamond, c-BN and C60 Powders with Superconductors

2006 ◽  
Vol 61 (12) ◽  
pp. 1541-1546 ◽  
Author(s):  
Gennadi A. Dubitsky ◽  
Vladimir D. Blank ◽  
Sergei G. Buga ◽  
Elena E. Semenova ◽  
Nadejda R. Serebryanaya ◽  
...  
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Critical Temperature ◽  
Boron Nitride ◽  
Synthetic Diamond ◽  
Cubic Boron Nitride ◽  
High Pressure High Temperature ◽  
Diamond Powders

Superhard superconducting samples with a critical temperature of TC = 10.5 - 12.6 K were obtained by high-pressure / high-temperature sintering of synthetic diamond powders coated with a niobium film and in 50% - 50% composition with superhard C60 fullerene. Superhard superconductors with TC = 9.3 K were obtained when diamond and molybdenum powders were sintered at a pressure of 7.7 GPa and a temperature of 2173 K. Superconducting samples with TC = 36.1 - 37.5 K have been obtained in the systems diamond-MgB2 and cubic boron nitride-MgB2.

Sign in / Sign up

Export Citation Format

Share Document