Position and number control of self-assembled InAs quantum dots by selective area metalorganic vapor-phase epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 599-604 ◽  
Author(s):  
Cheol Koo Hahn ◽  
Junichi Motohisa ◽  
Takashi Fukui
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Inas Quantum Dots ◽  
Selective Area ◽  
Self Assembled

Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications

2004 ◽  
Vol 85 (19) ◽  
pp. 4331 ◽  
Author(s):  
Kenichi Kawaguchi ◽  
Mitsuru Ekawa ◽  
Akito Kuramata ◽  
Tomoyuki Akiyama ◽  
Hiroji Ebe ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Inas Quantum Dots ◽  
Optical Device ◽  
Device Applications

Controlling the size of InAs quantum dots on Si1−xGex/Si(001) by metalorganic vapor-phase epitaxy

2009 ◽  
Vol 165 (1-2) ◽  
pp. 103-106
Author(s):  
Kenichi Kawaguchi ◽  
Hiroji Ebe ◽  
Mitsuru Ekawa ◽  
Akio Sugama ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Inas Quantum Dots

Distribution control of 1.55μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy

2009 ◽  
Vol 94 (14) ◽  
pp. 143103 ◽  
Author(s):  
Hao Wang ◽  
Jiayue Yuan ◽  
Torsten Rieger ◽  
Peter J. van Veldhoven ◽  
Peter Nouwens ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Inas Quantum Dots ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic
Sign in / Sign up

Export Citation Format

Share Document