Effects of RF power variation on properties of ZnO thin films and electrical properties of p–n homojunction

2003 ◽  
Vol 254 (3-4) ◽  
pp. 449-455 ◽  
Author(s):  
Deuk-Kyu Hwang ◽  
Kyu-Hyun Bang ◽  
Min-Chang Jeong ◽  
Jae-Min Myoung
2007 ◽  
Vol 29 (12) ◽  
pp. 1612-1615 ◽  
Author(s):  
Yangfan Lu ◽  
Zhizhen Ye ◽  
Yujia Zeng ◽  
Weizhong Xu ◽  
Liping Zhu ◽  
...  

2012 ◽  
Vol 576 ◽  
pp. 598-601
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Hanafi Ani Mohd ◽  
Rusop Mahmood Mohamad

ZnO thin films were deposited on Teflon substrates by RF magnetron sputtering at different substrate temperature and different RF power. In this work, we investigated the dependence of the deposition rate and also the ZnO physical and electrical properties on the substrate temperature and RF power. It is observed that the deposition rate increased as the temperature and RF power increased. FE-SEM images confirmed that microstructure of the thin films consists of nanoparticles. XRD data confirmed that the ZnO thin films at various RF power and substrate temperature have (002) structure.


2014 ◽  
Vol 29 (5) ◽  
pp. 275-280 ◽  
Author(s):  
P. J. Cao ◽  
W. J. Liu ◽  
F. Jia ◽  
Y. X. Zeng ◽  
D. L. Zhu ◽  
...  

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