Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport

2003 ◽  
Vol 257 (1-2) ◽  
pp. 75-83 ◽  
Author(s):  
H.-J. Rost ◽  
J. Doerschel ◽  
K. Irmscher ◽  
D. Schulz ◽  
D. Siche
Keyword(s):  
Single Crystals ◽  
Nitrogen Doping ◽  
Vapor Transport ◽  
Physical Vapor Transport

Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport

2014 ◽  
Author(s):  
Jeffrey J. Swab ◽  
James W. McCauley ◽  
Brady Butler ◽  
Daniel Snoha ◽  
Donovan Harris ◽  
...  
Keyword(s):  
Single Crystals ◽  
Knoop Hardness ◽  
Vapor Transport ◽  
Physical Vapor Transport

Parameters of substrates–single crystals of ZnTe and Cd1−xZnxTe (x<0.25), obtained by physical vapor transport technique (PVT)

1999 ◽  
Vol 197 (3) ◽  
pp. 423-426 ◽  
Author(s):  
A Mycielski ◽  
A Szadkowski ◽  
E Łusakowska ◽  
L Kowalczyk ◽  
J Domagała ◽  
...  
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique

Direct Observation of Gas Phase Nucleation during Physical Vapor Transport Growth of Organic Single Crystals Using a Transparent Furnace

2009 ◽  
Vol 48 (11) ◽  
pp. 118003 ◽  
Author(s):  
Sawako Miyamoto ◽  
Toshihiro Shimada ◽  
Manabu Ohtomo ◽  
Akira Chikamatsu ◽  
Tetsuya Hasegawa
Keyword(s):  
Single Crystals ◽  
Gas Phase ◽  
Direct Observation ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Phase Nucleation

Growth of SrS single crystals by physical vapor transport

1994 ◽  
Vol 137 (1-2) ◽  
pp. 150-154 ◽  
Author(s):  
R. Helbing ◽  
R.S. Feigelson
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport

AlN Substrates and Epitaxy Results

2010 ◽  
Vol 645-648 ◽  
pp. 1183-1186
Author(s):  
Yuri N. Makarov ◽  
T.Yu. Chemekova ◽  
O.V. Avdeev ◽  
N. Mokhov ◽  
S.S. Nagalyuk ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Single Crystals ◽  
Uv Light ◽  
Laser Diodes ◽  
Ultra Violet ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Light Emitting ◽  
Saw Devices ◽  
Bulk Single Crystals

AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc.

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