AlN Substrates and Epitaxy Results
2010 ◽
Vol 645-648
◽
pp. 1183-1186
Keyword(s):
Uv Light
◽
AlN substrates are produced by Physical Vapor Transport (PVT) growth of AlN bulk single crystals followed by post growth processing of the crystals (calibration, slicing, lapping, and polishing). The AlN substrates are suitable for epitaxial growth. The substrates may be used for development of devices such as ultra violet (UV) light emitting diodes (LEDs) and laser diodes (LDs), Piezo-Electric Transducers, SAW devices, RF Transistors, etc.
1993 ◽
Vol 22
(11)
◽
pp. 1369-1372
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1999 ◽
Vol 197
(3)
◽
pp. 423-426
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Keyword(s):
1991 ◽
Vol 602
(1)
◽
pp. 129-141
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2009 ◽
Vol 48
(11)
◽
pp. 118003
◽
Keyword(s):
1994 ◽
Vol 137
(1-2)
◽
pp. 150-154
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2007 ◽
Vol 253
(7)
◽
pp. 3581-3585
◽
Keyword(s):