Decipher Ultrasonic Signals from Defects in Thick Aluminum Extrusions to Identify Type and Origin of Defects

Manufacturing of thick seamless pipes of age-hardenable aluminum alloys are a specialized technology since their application is limited to specific hi-tech areas. Quality criteria for their inspection are propriety items of the very few production facilities that develop these criteria in-house. Present study relates ultrasonic signals reflecting back from non-continuities in the thickness of seamless pipes with their microstructural features. Detailed study of defects leads to the source of their formation and will ultimately help to systematically control them. Signals from ultrasonic testing trace defects as UT waves reflect back from discontinuities in the material. Defective sections of seamless pipes were cut with precision to reveal the defects. The sectioned surfaces were subjected to metallographic preparation and revealed defects were studied using Optical and Field Emission Scanning Electron Microscopes (FESEM). Defects are grouped based on the shape of UT signals as well as the defect morphology as revealed by microscopic studies. Most of the observed cracks are found to grow in the direction of extrusion. Energy Dispersive Spectroscopy (EDS) analysis was conducted to determine the composition of inclusions in the vicinity of the defects. Data from elemental analysis is used to identify the potential sources. The study recommends measures to control the defects and improve the yield.

Automated Identification of Defect Morphology and Spatial Distribution in Woven Composites

The performance of heterogeneous materials, for example, woven composites, does not always reach the predicted theoretical potential. This is caused by defects, such as residual voids introduced during the manufacturing process. A machine learning-based methodology is proposed to determine the morphology and spatial distribution of defects in composites based on X-ray microtomographic scans of the microstructure. A concept of defect "genome" is introduced as an indicator of the overall state of defects in the material, enabling a quick comparison of specimens manufactured under different conditions. The approach is illustrated for thermoplastic composites with unidirectional banana fiber reinforcement.

Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer

4H-SiC substrates and homo-epitaxial layers were obtained using the traditional methods of physical vapor transport and chemical vapor deposition. Defect morphology has been studied using both Synchrotron White Beam X-ray Topography and Monochromatic Beam X-ray Topography. Molten KOH etching method was adopted to further investigate the dislocation behavior mechanisms. Deflected dislocations were observed at the periphery regions in both substrate and epitaxial wafers. 3C polytypes and half loop arrays were observed in the 4H-SiC epitaxial wafer. It is also found that the majority of basal plane dislocations are converted to threading edge dislocations in the epitaxial wafer samples. The proportion of BPD to TED conversion depends on the surface step morphology and growth mode in epitaxial growth which in turn depends on the C/Si ratio. By the optimization of etching time prior to epitaxy and C/Si ratio, high-quality epitaxial wafers with extremely low basal plane dislocations densities (＜0.1 cm-2) was obtained.