Direct Observation of Gas Phase Nucleation during Physical Vapor Transport Growth of Organic Single Crystals Using a Transparent Furnace

2009 ◽  
Vol 48 (11) ◽  
pp. 118003 ◽  
Author(s):  
Sawako Miyamoto ◽  
Toshihiro Shimada ◽  
Manabu Ohtomo ◽  
Akira Chikamatsu ◽  
Tetsuya Hasegawa
Keyword(s):  
Single Crystals ◽  
Gas Phase ◽  
Direct Observation ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Phase Nucleation

Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport

2014 ◽  
Author(s):  
Jeffrey J. Swab ◽  
James W. McCauley ◽  
Brady Butler ◽  
Daniel Snoha ◽  
Donovan Harris ◽  
...  
Keyword(s):  
Single Crystals ◽  
Knoop Hardness ◽  
Vapor Transport ◽  
Physical Vapor Transport

Parameters of substrates–single crystals of ZnTe and Cd1−xZnxTe (x<0.25), obtained by physical vapor transport technique (PVT)

1999 ◽  
Vol 197 (3) ◽  
pp. 423-426 ◽  
Author(s):  
A Mycielski ◽  
A Szadkowski ◽  
E Łusakowska ◽  
L Kowalczyk ◽  
J Domagała ◽  
...  
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique

Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process Conditions

2005 ◽  
Vol 483-485 ◽  
pp. 25-30 ◽  
Author(s):  
Peter J. Wellmann ◽  
Thomas L. Straubinger ◽  
Patrick Desperrier ◽  
Ralf Müller ◽  
Ulrike Künecke ◽  
...  
Keyword(s):  
Temperature Field ◽  
Phase Composition ◽  
Gas Phase ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Process Conditions ◽  
Growth Technique ◽  
Experimental Implementation ◽  
P Type

We review the development of a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe into the growth cell. While the gas phase composition is basically fixed in conventional physical vapor transport (PVT) growth by crucible design and temperature field, the gas inlet of the MPVT configuration allows the direct tuning of the gas phase composition for improved growth conditions. The phrase "additional" means that only small amounts of extra gases are supplied in order to fine-tune the gas phase composition. We discuss the experimental implementation of the extra gas pipe and present numerical simulations of temperature field and mass transport in the new growth configuration. The potential of the growth technique will be outlined by showing the improvements achieved for p-type doping of 4H-SiC with aluminum, i.e. [Al]=9⋅1019cm-3 and ρ<0.2Ωcm, and n-type doping of SiC with phosphorous, i.e. [P]=7.8⋅1017cm-3.

Growth of SrS single crystals by physical vapor transport

1994 ◽  
Vol 137 (1-2) ◽  
pp. 150-154 ◽  
Author(s):  
R. Helbing ◽  
R.S. Feigelson
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport

Vacuum outgassing and gas phase thermal conduction of a microgravity physical vapor transport experiment

1987 ◽  
Vol 5 (4) ◽  
pp. 2406-2411 ◽  
Author(s):  
M. K. Debe ◽  
E. L. Cook ◽  
R. J. Poirier ◽  
G. J. Follett ◽  
L. R. Miller ◽  
...  
Keyword(s):  
Gas Phase ◽  
Thermal Conduction ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Experiment
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