Substrate nitridation effect and low temperature growth of GaN on sapphire (0 0 0 1) by plasma-excited organometallic vapor-phase epitaxy

1998 ◽  
Vol 183 (1-2) ◽  
pp. 62-68 ◽  
Author(s):  
Takashi Tokuda ◽  
Akihiro Wakahara ◽  
Susumu Noda ◽  
Akio Sasaki
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth

scholarly journals Low-Temperature Growth of GaAs by Organometallic Vapor Phase Epitaxy Using TEGa and TBAs

2007 ◽  
Vol 56 (9) ◽  
pp. 880-885
Author(s):  
Keiji HIDAKA ◽  
Takashi HIRAMATSU ◽  
Yoshikazu TERAI ◽  
Osamu ERYU ◽  
Yasufumi FUJIWARA
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth

Low temperature growth of (100) HgCdTe layers with DtBTe in metalorganic vapor phase epitaxy

1995 ◽  
Vol 24 (9) ◽  
pp. 1093-1097 ◽  
Author(s):  
K. Yasuda ◽  
H. Hatano ◽  
T. Ferid ◽  
K. Kawamoto ◽  
T. Maejima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth

Low Temperature Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy

2003 ◽  
Vol 764 ◽  
Author(s):  
Hai-Ping Liu ◽  
In-Gann Chen ◽  
Jenq-Dar Tsay ◽  
Wen-Yueh Liu ◽  
Yih-Der Guo ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Growth Mechanism ◽  
Growth Temperature ◽  
Vapor Phase Epitaxy ◽  
High Index ◽  
Hydride Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gan Crystal

AbstractThe low temperature growth of GaN crystal using epitaxy lateral overgrowth (ELO) on SiO2 dot pattern below 900°C by hydride vapor phase epitaxy (HVPE) have been studied. It is observed that the growth rate of GaN hexagonal pyramidal crystals along [1101] direction increases as growth temperature decreases. At low temperature of ∼ 850°C, hexagonal GaN columnar crystals with high index facet at the top can be observed. It is proposed that the surface diffusion length of precursors, such as NH3 and GaCl, decreases at lower temperature that reduces the probability of desorption and increase the lifetime. The condensation of Ga liquid droplets on the GaN surface will change the relative stability of {1101} facet. Therefore, the formation of high index planes such as {2122} facet on the top of hexagonal column along with the formation of stacking fault on the (0001) plane can be observed. A detailed study of the effect of growth temperature on the crystal growth mechanism will be presented.

Low temperature growth of InGaAs layers on misoriented GaAs substrates by metalorganic vapor phase epitaxy

2002 ◽  
Vol 80 (12) ◽  
pp. 2054-2056 ◽  
Author(s):  
Y. Takano ◽  
K. Kobayashi ◽  
H. Iwahori ◽  
N. Kuroyanagi ◽  
K. Kuwahara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gaas Substrates
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