Control of the atomic layer-by-layer growth process in laser molecular beam epitaxy with the emission monitoring method

1998 ◽  
Vol 187 (2) ◽  
pp. 240-244
Author(s):  
M Kanai ◽  
T Kawai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Process ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Layer Growth ◽  
Layer By Layer ◽  
Monitoring Method ◽  
Laser Molecular Beam Epitaxy ◽  
Emission Monitoring

Molecular layer-by-layer growth of SrTiO3 and BaTiO3 films by laser molecular beam epitaxy

1996 ◽  
Vol 41 (1) ◽  
pp. 134-137 ◽  
Author(s):  
T. Maeda ◽  
G.H. Lee ◽  
T. Ohnishi ◽  
M. Kawasaki ◽  
M. Yoshimoto ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Molecular Layer ◽  
Layer Growth ◽  
Layer By Layer ◽  
Laser Molecular Beam Epitaxy

scholarly journals Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

2017 ◽  
Vol 2 (1) ◽  
Author(s):  
Qingyu Lei ◽  
Maryam Golalikhani ◽  
Bruce A. Davidson ◽  
Guozhen Liu ◽  
Darrell G. Schlom ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Layer By Layer ◽  
Oxide Interfaces ◽  
Laser Molecular Beam Epitaxy

Epitaxial Solid-Solution Films of Immiscible MgO and CaO

1994 ◽  
Vol 341 ◽  
Author(s):  
E. S. Hellman ◽  
E. H. Hartford
Keyword(s):  
Solid Solution ◽  
Molecular Beam Epitaxy ◽  
Lattice Constant ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Building Blocks ◽  
Layer Growth ◽  
Growth Mode ◽  
Miscibility Gap ◽  
Layer By Layer

AbstractMetastable solid-solutions in the MgO-CaO system grow readily on MgO at 300°C by molecular beam epitaxy. We observe RHEED oscillations indicating a layer-by-layer growth mode; in-plane orientation can be described by the Matthews theory of island rotations. Although some films start to unmix at 500°C, others have been observed to be stable up to 900°C. The Mgl-xCaxO solid solutions grow despite a larger miscibility gap in this system than in any system for which epitaxial solid solutions have been grown. We describe attempts to use these materials as adjustable-lattice constant epitaxial building blocks

Atomic Layer Growth of Bi-Sr-Ca-Cu-O by Molecular Beam Epitaxy Using Ozone under UV Irradiation

1991 ◽  
Vol 30 (Part 2, No. 1B) ◽  
pp. L106-L109 ◽  
Author(s):  
Shin Yokoyama ◽  
Takayuki Ishibashi ◽  
Masaaki Yamagami ◽  
Mitsuo Kawabe
Keyword(s):  
Molecular Beam Epitaxy ◽  
Uv Irradiation ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Layer Growth
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