High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3
1999 ◽
Vol 200
(1-2)
◽
pp. 63-69
◽
2006 ◽
Vol 352
(23-25)
◽
pp. 2332-2334
◽
2005 ◽
Vol 278
(1-4)
◽
pp. 411-414
◽
2006 ◽
Vol 21
(5)
◽
pp. 702-708
◽
Keyword(s):
Keyword(s):
2013 ◽
Vol 9
(3)
◽
pp. 367-370
◽
1990 ◽
Vol 29
(Part 2, No. 2)
◽
pp. L205-L206
◽
Keyword(s):