High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer

2006 ◽  
Vol 352 (23-25) ◽  
pp. 2332-2334 ◽  
Author(s):  
B. Potì ◽  
M.A. Tagliente ◽  
A. Passaseo
Keyword(s):  
Buffer Layer ◽  
High Quality ◽  
Sapphire Substrates ◽  
Aln Buffer ◽  
Gan Film

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

1986 ◽  
Vol 48 (5) ◽  
pp. 353-355 ◽  
Author(s):  
H. Amano ◽  
N. Sawaki ◽  
I. Akasaki ◽  
Y. Toyoda
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Phase ◽  
High Quality ◽  
Aln Buffer ◽  
Gan Film

High quality GaN film growth on AlN buffer layer, pretreated with alternating pulsative supply of TMG and NH3

1999 ◽  
Vol 200 (1-2) ◽  
pp. 63-69 ◽  
Author(s):  
Jin Soo Hwang ◽  
Satoru Tanaka ◽  
Sohachi Iwai ◽  
Yoshinobu Aoyagi ◽  
Seeyearl Seong
Keyword(s):  
Buffer Layer ◽  
Film Growth ◽  
High Quality ◽  
Aln Buffer ◽  
Gan Film

Supersonic Jet Epitaxy: An Improved Method for Nitride Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
Peter E. Norris ◽  
Long D. Zhu ◽  
H. Paul Maruska ◽  
Wilson HO ◽  
Scott Ustin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Microwave Plasma ◽  
Supersonic Jet ◽  
Plasma Source ◽  
Improved Method ◽  
High Quality ◽  
Carrier Gas ◽  
Sapphire Substrates ◽  
Supersonic Jet Epitaxy ◽  
Gan Crystal

ABSTRACTGaN was grown by supersonic jet epitaxy(SSJE), seeding triethylgallium in helium carrier gas. Activated nitrogen was supplied by a microwave plasma source. Single crystalline GaN films were deposited on the Si-face 6H-SiC and the c-plane sapphire substrates at 600–670°C. A cubic SiC buffer layer was grown onSi(111) at 800°C by SSJE using dichlorosilane, acetylene, and a high quality GaN crystal was grown on this template at 630°C. The materials high quality was proved by hard rectifying characteristics of a diode with an N-GaN/β-SiC/P-Si(111) structure.

Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

2006 ◽  
Vol 21 (5) ◽  
pp. 702-708 ◽  
Author(s):  
D Gogova ◽  
D Siche ◽  
R Fornari ◽  
B Monemar ◽  
P Gibart ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Structural Studies ◽  
High Quality ◽  
Aln Buffer

Dependence of GaN Defect Structure on the Growth Temperature of the AlN Buffer Layer

2008 ◽  
Vol 1068 ◽  
Author(s):  
Yuen-Yee Wong ◽  
Edward Yi Chang ◽  
Tsung-Hsi Yang ◽  
Jet-Rung Chang ◽  
Yi-Cheng Chen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Growth Temperature ◽  
Defect Structure ◽  
Defect Density ◽  
Layer Growth ◽  
Threading Dislocation ◽  
Higher Temperature ◽  
Lower Temperature ◽  
Aln Buffer ◽  
Gan Film

ABSTRACTThe defect structure of the GaN film grown on sapphire by plasma-assisted molecular beam epitaxy (PAMBE) technique was found to be dependent on the AlN buffer layer growth temperature. This buffer growth temperature controlled the defect density in GaN film but had shown contrary effects on the density of screw threading dislocation (TD) and edge TD. The density of screw TD was high on lower temperature buffer but low on the higher temperature buffer. Meanwhile the density of edge TD had shown the opposite. Further examinations have suggested that the defect structure was closely related to the stress in the GaN film, which can be controlled by the growth temperature of the AlN buffer. Using the 525°C AlN buffer, optimum quality GaN film with relatively low screw and edge TDs were achieved.

Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

2016 ◽  
Vol 9 (2) ◽  
pp. 025501 ◽  
Author(s):  
Hideto Miyake ◽  
Gou Nishio ◽  
Shuhei Suzuki ◽  
Kazumasa Hiramatsu ◽  
Hiroyuki Fukuyama ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Quality ◽  
Aln Film ◽  
Aln Buffer

scholarly journals High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes

AIP Advances ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 055110 ◽  
Author(s):  
Chia-Yen Huang ◽  
Pei-Yu Wu ◽  
Kai-Shiang Chang ◽  
Yun-Hsiang Lin ◽  
Wei-Chih Peng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Ultra Violet ◽  
High Quality ◽  
Light Emitting ◽  
Ultra Violet Light ◽  
Violet Light ◽  
Sputter Deposited ◽  
Aln Buffer

Effect of Al pre-deposition on AlN buffer layer and GaN film grown on Si (111) substrate by MOCVD

2013 ◽  
Vol 9 (3) ◽  
pp. 367-370 ◽  
Author(s):  
S. J. Bak ◽  
D. -H. Mun ◽  
K. C. Jung ◽  
J. H. Park ◽  
H. J. Bae ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Aln Buffer ◽  
Gan Film

Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates

2016 ◽  
Vol 9 (8) ◽  
pp. 081001 ◽  
Author(s):  
Chia-Hung Lin ◽  
Shinya Tamaki ◽  
Yasuhiro Yamashita ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu
Keyword(s):  
Surface Morphology ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Sapphire Substrates ◽  
Buffer Layer Thickness ◽  
Aln Buffer
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