Arsenic-free high-temperature surface cleaning of molecular beam epitxy (MBE)-grown AlGaAs layer with new passivation structure

1999 ◽  
Vol 201-202 ◽  
pp. 174-177 ◽  
Author(s):  
Kanji Iizuka ◽  
Hideharu Watanabe ◽  
Toshimasa Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
High Temperature ◽  
Molecular Beam ◽  
Surface Cleaning ◽  
Algaas Layer ◽  
Temperature Surface

Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning method

2007 ◽  
Vol 301-302 ◽  
pp. 26-29 ◽  
Author(s):  
N. Isomura ◽  
S. Tsukamoto ◽  
K. Iizuka ◽  
Y. Arakawa
Keyword(s):  
High Temperature ◽  
Surface Cleaning ◽  
Cleaning Method ◽  
Temperature Surface

Two-step-heating sequence in arsenic-free high-temperature surface cleaning method for GaAs–AlGaAs MBE

2001 ◽  
Vol 227-228 ◽  
pp. 41-45 ◽  
Author(s):  
Kanji Iizuka ◽  
Yasuo Sakamaki ◽  
Toshimasa Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
High Temperature ◽  
Surface Cleaning ◽  
Cleaning Method ◽  
Step Heating ◽  
Temperature Surface

High-temperature surface cleaning of AlGaAs without As flux for MBE regrowth

1997 ◽  
Vol 175-176 ◽  
pp. 447-450 ◽  
Author(s):  
Kanji Iizuka ◽  
Kazuo Matsumaru ◽  
Toshimasa Suzuki ◽  
Yoshiyuki Takahira ◽  
Toshihiro Nishioka ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Cleaning ◽  
Temperature Surface

Photoelectron diffraction and photoelectron holography study of a Ge(111) high-temperature surface phase transition

1993 ◽  
Vol 281 (3) ◽  
pp. 178-179
Author(s):  
T.T. Tran ◽  
S. Thevuthasan ◽  
Y.J. Kim ◽  
D.J. Friedman ◽  
A.P. Kaduwela ◽  
...  
Keyword(s):  
Phase Transition ◽  
High Temperature ◽  
Surface Phase ◽  
Surface Phase Transition ◽  
Photoelectron Diffraction ◽  
Temperature Surface

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

Surface Cleaning of GaSb (100) Substrates for Molecular-Beam Epitaxy

1984 ◽  
Vol 23 (Part 1, No. 12) ◽  
pp. 1657-1658 ◽  
Author(s):  
Mitsuru Kodama ◽  
Akira Ryoji ◽  
Morihiko Kimata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Cleaning
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