The characterization of indium desorbed Si surfaces for low temperature surface cleaning in Si molecular beam epitaxy

1985 ◽  
Vol 58 (5) ◽  
pp. 1854-1859 ◽  
Author(s):  
H. T. Yang ◽  
P. M. Mooney
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Surface Cleaning ◽  
Temperature Surface

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum

Characterization of mismatched SiGe grown on low temperature Si buffer layers by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 499-503 ◽  
Author(s):  
K.K. Linder ◽  
F.C. Zhang ◽  
J.-S. Rieh ◽  
P. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Buffer Layers

Characterization of low temperature GaAs grown by molecular beam epitaxy

1996 ◽  
Vol 92 ◽  
pp. 66-69 ◽  
Author(s):  
W.C. Lee ◽  
T.M. Hsu ◽  
J.-I. Chyi ◽  
G.S. Lee ◽  
W.-H. Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Low Temperature Gaas

scholarly journals Structural and defect characterization of GaAs and AlxGa1−xAs grown at low temperature by molecular beam epitaxy

1997 ◽  
Vol 81 (1) ◽  
pp. 190-198 ◽  
Author(s):  
S. Fleischer ◽  
C. D. Beling ◽  
S. Fung ◽  
W. R. Nieveen ◽  
J. E. Squire ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Defect Characterization

Characterization of Ga1−xMnxAs/(001)GaAs epilayers grown by low-temperature molecular beam epitaxy

2006 ◽  
Vol 86 (6) ◽  
pp. 395-401 ◽  
Author(s):  
M. W. Fay ◽  
Y. Han ◽  
P. D. Brown ◽  
K. W. Edmonds ◽  
K. Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam
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