Surface Cleaning of GaSb (100) Substrates for Molecular-Beam Epitaxy

Abstract This paper reviews 35 years of brief history on plasma-excited molecular beam epitaxy, focusing on special values added to conventional Molecular Beam Epitaxy (MBE) through usage of plasma-excited molecular beams. These include low temperature surface cleaning, low temperature growth, selected area re-growth and impurity doping. These technologies are extremely important to realize nano-scale low-dimensional device structures. InN and In-rich InGaN are also highlighted as unique material systems, which plasma-excited MBE process is inevitable to grow. Future prospect of this technology will also be included from the device application viewpoints.

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In situreflection electron energy loss spectroscopy measurements of low temperature surface cleaning for Si molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.109694 ◽

1993 ◽

Vol 63 (10) ◽

pp. 1414-1416 ◽

Cited By ~ 5

Author(s):

Shouleh Nikzad ◽

Selmer S. Wong ◽

Channing C. Ahn ◽

Aimee L. Smith ◽

Harry A. Atwater

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Energy Loss ◽

Electron Energy ◽

Electron Energy Loss Spectroscopy ◽

Molecular Beam ◽

Surface Cleaning ◽

Electron Energy Loss ◽

Temperature Surface

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In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80173-a ◽

1995 ◽

Vol 150 ◽

pp. 18-22 ◽

Cited By ~ 3

Author(s):

H. Künzel ◽

R. Bochnia ◽

J. Böttcher ◽

P. Harde ◽

A. Hase ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Surface Cleaning ◽

Cleaning Procedure ◽

Hydrogen Radicals

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Si(100) Surface Cleaning Using Sr and SrO

MRS Proceedings ◽

10.1557/proc-716-b3.4 ◽

2002 ◽

Vol 716 ◽

Cited By ~ 1

Author(s):

Yi Wei ◽

Xiaoming Hu ◽

Yong Liang ◽

D.C. Jordan ◽

Brad Craigo ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Temperature Programmed Desorption ◽

Surface Cleaning ◽

Temperature Cycle ◽

Pit Formation ◽

High K ◽

Temperature Programmed ◽

High K Dielectric ◽

Oxide Removal

AbstractA method for removing SiO2 and producing an ordered Si(100) surface using Sr or SrO has been developed. In this technique, a few monolayers of Sr or SrO are deposited onto the as received Si(100) wafer in a ultrahigh vacuum molecular beam epitaxy system. The substrate is then heated to ∼800°C for about 5 minutes, the SiO2 is removed to leave behind a Sr terminated Si(100) surface. This Sr terminated Si(100) surface is well suited for the growth of crystalline high k dielectric SrTiO3 films. Temperature programmed desorption measurements were carried out to understand the mechanism of removing SiO2 from Si(100) using Sr or SrO. The species we observed coming off the surface during the temperature cycle was mainly SiO and O, no significant amount of Sr containing species was observed. We conclude that the SiO2 removal is due to the catalyst reaction SiO2 + Sr (or SrO) → SiO (g) + O + Sr (or SrO). The reaction happened through several intermediate steps. The reaction SiO2 + Si → 2SiO (g) at the SiO2/Si interface is limited and the pit formation is suppressed. The main roles that Sr or SrO play during the oxide removal process are catalysts promoting SiO formation and preventing further etching and the formation of pits in the substrate.

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