High temperature molecular beam source reactor

1984 ◽  
Vol 16 (11) ◽  
pp. 1401-1426 ◽  
Author(s):  
G. Rotzoll
2019 ◽  
Vol 90 (11) ◽  
pp. 115109 ◽  
Author(s):  
J. Dudek ◽  
K. Puczka ◽  
T. Urbańczyk ◽  
J. Koperski

1992 ◽  
Vol 63 (8) ◽  
pp. 3939-3943 ◽  
Author(s):  
D. J. Auerbach ◽  
C. T. Rettner

1990 ◽  
Vol 206 ◽  
Author(s):  
William J. Herron ◽  
James F. Garvey

ABSTRACTWe present our latest attempts to utilize a Smalley-type cluster beam source, to generate novel thin films. This technique employs entraining, within a high pressure molecular beam expansion, the products generated from laser ablation of a rotating target rod. We will show how such a cluster beam source can be used to generate a high temperature material within a molecular beam and deposit it intact on a relatively cool substrate. By tailoring the various expansion conditions (ie., expansion pressure, laser fluence, type of carrier gas, pulse delay, etc...) one can drastically effect the morphology and chemical nature of the surface generated. This technique has the promise that it may be able to fabricate a wide variety of thin films with obvious industrial applications (superconducting thin films, diamond-like carbon films, patterned or multi-layered thin films, etc...)


1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.


1998 ◽  
Vol 537 ◽  
Author(s):  
C.T. Foxon ◽  
T.S. Cheng ◽  
D. Korakakis ◽  
S.V. Novikov ◽  
R.P. Campion ◽  
...  

AbstractVarious methods have been used to initiate growth by Molecular Beam Epitaxy (MBE) of GaN on sapphire, or other substrates, but there is always a problem with morphology and with a high defect density which results in the formation of a sub-grain boundary structure. We show that by using, homo-epitaxial growth on properly prepared bulk GaN substrates, combined with high temperature growth, we obtain a significant improvement in surface morphology. Growth at sufficiently high temperature leads to a rapid smoothing of the surface and to almost atomically flat surfaces over relatively large areas. Multi-Quantum Well structures grown on such GaN epitaxial films are dislocation free with abrupt interfaces.


1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.


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