Peculiarities of migration-enhanced-epitaxy (MEE) versus molecular beam epitaxy (MBE) growth kinetics of CdSe fractional monolayers in ZnSe

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

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Investigating and manipulating the molecular beam epitaxy growth kinetics of intrinsic magnetic topological insulator MnBi2Te4 with in situ angle-resolved photoemission spectroscopy

Journal of Physics Condensed Matter ◽

10.1088/1361-648x/aba06d ◽

2020 ◽

Vol 32 (47) ◽

pp. 475002 ◽

Cited By ~ 2

Author(s):

Kejing Zhu ◽

Yunhe Bai ◽

Xiyu Hong ◽

Zuhan Geng ◽

Yuying Jiang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Topological Insulator ◽

Growth Kinetics ◽

Molecular Beam ◽

Photoemission Spectroscopy ◽

Molecular Beam Epitaxy Growth ◽

Angle Resolved Photoemission Spectroscopy ◽

Kinetics Of

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Growth kinetics of AlxGa1–xN grown via ammonia-based metal-organic molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2009.10.044 ◽

2010 ◽

Vol 312 (2) ◽

pp. 209-212 ◽

Cited By ~ 3

Author(s):

Daniel Billingsley ◽

Walter Henderson ◽

David Pritchett ◽

W. Alan Doolittle

Keyword(s):

Molecular Beam Epitaxy ◽

Growth Kinetics ◽

Molecular Beam ◽

Metal Organic ◽

Kinetics Of

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Effect of atomic silicon and germanium beams on the growth kinetics of Si1 – x Ge x layers in Si–GeH4 molecular beam epitaxy

Technical Physics ◽

10.1134/s1063784217030161 ◽

2017 ◽

Vol 62 (3) ◽

pp. 449-459

Author(s):

L. K. Orlov ◽

S. V. Ivin ◽

V. M. Fomin

Keyword(s):

Molecular Beam Epitaxy ◽

Growth Kinetics ◽

Molecular Beam ◽

Silicon And Germanium ◽

Kinetics Of

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Growth Kinetics of Silicon Molecular Beam Epitaxy

Chemistry and Physics of Solid Surfaces VII - Springer Series in Surface Sciences ◽

10.1007/978-3-642-73902-6_20 ◽

1988 ◽

pp. 557-581 ◽

Cited By ~ 2

Author(s):

E. Kasper ◽

H. Jorke

Keyword(s):

Molecular Beam Epitaxy ◽

Growth Kinetics ◽

Molecular Beam ◽

Kinetics Of

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Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy

Journal of Applied Physics ◽

10.1063/1.371364 ◽

1999 ◽

Vol 86 (8) ◽

pp. 4322-4325 ◽

Cited By ~ 4

Author(s):

C. Adelmann ◽

R. Langer ◽

E. Martinez-Guerrero ◽

H. Mariette ◽

G. Feuillet ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Growth Kinetics ◽

Molecular Beam ◽

Kinetics Of

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Molecular Beam Epitaxy of II/VI Compounds for Blue/Green Laser Diodes

MRS Proceedings ◽

10.1557/proc-340-419 ◽

1994 ◽

Vol 340 ◽

Author(s):

J.M. Gaines

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Laser Diodes ◽

High Energy ◽

Green Laser ◽

Mbe Growth ◽

Lattice Matching ◽

Migration Enhanced Epitaxy ◽

Sticking Coefficients

ABSTRACTThe growth of I1/VI epitaxial layers by molecular beam epitaxy (MBE) for blue/green lasers is described. To elucidate the issues in the growth of II/VI materials, the differences between II/V and II/VI MBE growth are addressed, including factors such as: substrates, molecular beam sources, lattice matching, sticking coefficients, and surface diffusion. Results of reflection high-energy diffraction (RHEED) oscillation measurements are presented. RHEED oscillations have proven to be a valuable in-situ tool for controlling certain aspects of 1I/VI MBE growth, such as ZnSySe1-y composition, Zn1-xMgxSe composition, and the growth rate of ZnSe during migration-enhanced epitaxy.

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