Molecular Beam Epitaxy of II/VI Compounds for Blue/Green Laser Diodes
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ABSTRACTThe growth of I1/VI epitaxial layers by molecular beam epitaxy (MBE) for blue/green lasers is described. To elucidate the issues in the growth of II/VI materials, the differences between II/V and II/VI MBE growth are addressed, including factors such as: substrates, molecular beam sources, lattice matching, sticking coefficients, and surface diffusion. Results of reflection high-energy diffraction (RHEED) oscillation measurements are presented. RHEED oscillations have proven to be a valuable in-situ tool for controlling certain aspects of 1I/VI MBE growth, such as ZnSySe1-y composition, Zn1-xMgxSe composition, and the growth rate of ZnSe during migration-enhanced epitaxy.
1994 ◽
Vol 137
(1-2)
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pp. 187-194
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2000 ◽
Vol 360
(1-2)
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pp. 195-204
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1999 ◽
Vol 201-202
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pp. 461-464
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1991 ◽
Vol 9
(4)
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pp. 2189
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