Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

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Surface Activity of Magnesium During GaN Molecular Beam Epitaxial Growth

MRS Proceedings ◽

10.1557/proc-595-f99w3.65 ◽

1999 ◽

Vol 595 ◽

Cited By ~ 1

Author(s):

V. Ramachandran ◽

R. M. Feenstra ◽

J. E. Northrup ◽

D. W. Greve

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Mbe Growth ◽

Molecular Beam Epitaxial ◽

Electron Counting ◽

Surface Reconstructions ◽

Small Doses ◽

Molecular Beam Epitaxial Growth ◽

Gan Film

AbstractExposure of wurtzite GaN films grown on Si-polar 6H-SiC(0001) to magnesium during molecular beam epitaxy (MBE) has been studied. In the nitrogen rich regime of MBE growth, GaN films are known to grow with rough morphology. We observe on GaN(0001) that small doses of Mg act as a surfactant, smoothing out this roughness. An interpretation of this surfactant behavior is given in terms of electron counting arguments for the surface reconstructions. Previously, we have reported that larger doses of Mg lead to inversion of the Ga-polar GaN film to produce N-polar GaN. Several Mg-related reconstructions of the resulting GaN(000 ) surface are reported.

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Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-1178-aa01-12 ◽

2009 ◽

Vol 1178 ◽

Author(s):

Yi-Lu Chang ◽

Arya Fatehi ◽

Feng Li ◽

Zetian Mi

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Room Temperature ◽

Molecular Beam ◽

Stacking Faults ◽

Seeding Layer ◽

Mbe Growth ◽

Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

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Surface activity of magnesium during GaN molecular beam epitaxial growth

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300004397 ◽

2000 ◽

Vol 5 (S1) ◽

pp. 280-286 ◽

Cited By ~ 2

Author(s):

V. Ramachandran ◽

R. M. Feenstra ◽

J. E. Northrup ◽

D. W. Greve

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Mbe Growth ◽

Molecular Beam Epitaxial ◽

Electron Counting ◽

Surface Reconstructions ◽

Small Doses ◽

Image Position ◽

Molecular Beam Epitaxial Growth ◽

Gan Film

Exposure of wurtzite GaN films grown on Si-polar 6H-SiC(0001) to magnesium during molecular beam epitaxy (MBE) has been studied. In the nitrogen rich regime of MBE growth, GaN films are known to grow with rough morphology. We observe on GaN(0001) that small doses of Mg act as a surfactant, smoothing out this roughness. An interpretation of this surfactant behavior is given in terms of electron counting arguments for the surface reconstructions. Previously, we have reported that larger doses of Mg lead to inversion of the Ga-polar GaN film to produce N-polar GaN. Several Mg-related reconstructions of the resulting GaN(000 ) surface are reported.

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Molecular-beam epitaxial growth surface roughening kinetics of Ge (001): A theoretical study

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586666 ◽

1993 ◽

Vol 11 (2) ◽

pp. 253 ◽

Cited By ~ 5

Author(s):

R. Venkatasubramanian

Keyword(s):

Epitaxial Growth ◽

Molecular Beam ◽

Theoretical Study ◽

Growth Surface ◽

Surface Roughening ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Kinetics Of

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Introduction of Radiative Isoelectronic Complexes During Molecular Beam Epitaxial Growth of Si and Si1-xGex/Si Superlattices

MRS Proceedings ◽

10.1557/proc-378-887 ◽

1995 ◽

Vol 378 ◽

Cited By ~ 1

Author(s):

Karen L. Moore ◽

Oliver King ◽

Dennis G. Hall ◽

Joze Bevk ◽

Matthias Furtsch

Keyword(s):

Molecular Beam Epitaxy ◽

Epitaxial Growth ◽

Molecular Beam ◽

Experimental Results ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Phonon Linewidth ◽

Ion Implanted

AbstractRadiative isoelectronic impurity complexes consisting of pairs of Be atoms that bind excitons can be formed in both Si and SiGe/Si superlattices during growth by molecular beam epitaxy. We describe the conditions under which these radiative complexes can be formed and show that they can be localized in the alloy layers of a superlattice. Experimental results from samples with grown-in Be are compared to previous results from ion implanted samples. Superlattices of varying well widths are examined and a narrowing of the no-phonon linewidth is observed.

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