Investigating and manipulating the molecular beam epitaxy growth kinetics of intrinsic magnetic topological insulator MnBi2Te4 with in situ angle-resolved photoemission spectroscopy

2020 ◽  
Vol 32 (47) ◽  
pp. 475002 ◽  
Author(s):  
Kejing Zhu ◽  
Yunhe Bai ◽  
Xiyu Hong ◽  
Zuhan Geng ◽  
Yuying Jiang ◽  
...  
Author(s):  
Sergei Timoshnev ◽  
Andrey Mizerov ◽  
Maxim Sobolev ◽  
Ekaterina Nikitina

AbstractThe studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.


2004 ◽  
Vol 84 (18) ◽  
pp. 3684-3686 ◽  
Author(s):  
E. Monroy ◽  
E. Sarigiannidou ◽  
F. Fossard ◽  
N. Gogneau ◽  
E. Bellet-Amalric ◽  
...  

2001 ◽  
Vol 79 (20) ◽  
pp. 3263-3265 ◽  
Author(s):  
H. Kim ◽  
G. Glass ◽  
J. A. N. T. Soares ◽  
Y. L. Foo ◽  
P. Desjardins ◽  
...  

2010 ◽  
Vol 312 (2) ◽  
pp. 209-212 ◽  
Author(s):  
Daniel Billingsley ◽  
Walter Henderson ◽  
David Pritchett ◽  
W. Alan Doolittle

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