Crystal field distribution and non-radiative transitions in Cr3+-doped gallogermanates

1997 ◽  
Vol 72-74 ◽  
pp. 193-194 ◽  
Author(s):  
Marek Grinberg ◽  
Włodzimierz Jaskolski ◽  
Peter I. Macfarlane ◽  
Brian Henderson ◽  
Keith Holliday
Keyword(s):  
Crystal Field ◽  
Field Distribution ◽  
Radiative Transitions

Phase transitions of Ising mixed spin 1 and 3/2 with random crystal field distribution

2016 ◽  
Vol 460 ◽  
pp. 210-221 ◽  
Author(s):  
S. Sabri ◽  
M. EL Falaki ◽  
M. EL Yadari ◽  
A. Benyoussef ◽  
A. EL Kenz
Keyword(s):  
Phase Transitions ◽  
Crystal Field ◽  
Field Distribution ◽  
Mixed Spin

scholarly journals Electronic Levels Of Cr2+ Ion Doped In II-VI Compounds Of ZnS – Crystal Field Treatment

2012 ◽  
Vol 56 (1) ◽  
pp. 94-99
Author(s):  
Simona Ivaşcu
Keyword(s):  
Experimental Data ◽  
Crystal Field ◽  
Energy Levels ◽  
Electronic States ◽  
Spin Hamiltonian ◽  
Host Matrix ◽  
Absorption And Emission ◽  
Radiative Transitions ◽  
Impurity Ions ◽  
Hamiltonian Parameters

AbstractThe aim of present paper is to report the results on the modeling of the crystal field and spin-Hamiltonian parameters of Cr2+ doped in II-VI host matrix ZnS and simulate the energy levels scheme of such system taken into account the fine interactions entered in the Hamiltonian of the system. All considered types of such interaction are expected to give information on the new peculiarities of the absorption and emission bands, as well as of non-radiative transitions between the electronic states of impurity ions. The obtained results were disscused, compared with similar obtained results in literature and with experimental data.

Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the Direction

1997 ◽  
Vol 468 ◽  
Author(s):  
A. Andenet ◽  
B. Gil ◽  
Y.-M. Le Vaillant ◽  
S. Clur ◽  
O. Briot ◽  
...  
Keyword(s):  
Electromagnetic Field ◽  
Group Theory ◽  
Crystal Field ◽  
Optical Anisotropy ◽  
Optical Response ◽  
Biaxial Stress ◽  
Radiative Transitions ◽  
Growth Plane ◽  
Plane Anisotropy

ABSTRACTGroup theory states that the spectroscopy of excitons in GaN epilayers grown with biaxial stress on M Plane (10–10)-oriented substrates is strongly anisotropie in the growth plane, in contrast to the situation if growth occurs on conventional C plane substrates. In addition, we predict existence of nine radiative transitions instead of five, three for each family of A, B, and C excitons. We calculate the in-plane anisotropy and show that, due to the crossed configuration of the wurtzite crystal field and the built-in strain one, the A exciton is significantly coupled to the electromagnetic field in π polarization (E//c).

Recent Radiative and Collisional Atomic Data of Astrophysical Interest

1988 ◽  
Vol 102 ◽  
pp. 129-132
Author(s):  
K.L. Baluja ◽  
K. Butler ◽  
J. Le Bourlot ◽  
C.J. Zeippen
Keyword(s):  
Mass Production ◽  
Bound States ◽  
Physical Models ◽  
Impact Excitation ◽  
Electron Impact Excitation ◽  
Atomic Data ◽  
Isoelectronic Sequence ◽  
Astrophysical Interest ◽  
Radiative Transitions ◽  
Forbidden Transitions

SummaryUsing sophisticated computer programs and elaborate physical models, accurate radiative and collisional atomic data of astrophysical interest have been or are being calculated. The cases treated include radiative transitions between bound states in the 2p4and 2s2p5configurations of many ions in the oxygen isoelectronic sequence, the photoionisation of the ground state of neutral iron, the electron impact excitation of the fine-structure forbidden transitions within the 3p3ground configuration of CℓIII, Ar IV and K V, and the mass-production of radiative data for ions in the oxygen and fluorine isoelectronic sequences, as part of the international Opacity Project.

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