Three-dimensional ordered nano-crystalline Si made by pulsed laser interference crystallization of a-Si:H/a-SiNx:H multilayers

2000 ◽  
Vol 266-269 ◽  
pp. 1015-1020 ◽  
Author(s):  
Xinfan Huang ◽  
Li Wang ◽  
Jian Li ◽  
Wei Li ◽  
Ming Jiang ◽  
...  
2003 ◽  
Vol 762 ◽  
Author(s):  
M. Mulato ◽  
A. R. Zanatta ◽  
D. Toet ◽  
I. E. Chambouleyron

AbstractIn this work, we study the pulsed laser crystallization of hydrogen-free amorphous germanium-nitrogen alloys (a-GeN). We discuss the role of nitrogen during phase transitions and the possible application of the resulting structure as an optical diffraction grating. The crystallized region results of pure microcrystalline germanium (μc-Ge). An indication that Ge-N bonds have broken and nitrogen outdiffused of the film is obtained from infrared spectroscopy and confirmed by Raman spectra. A pattern of alternating a-GeN and μc-Ge lines with a period of about 4 μm acts as an optical diffraction grating due to the difference in optical properties between the two materials, and the three dimensional surface profile, caused by N2 effusion, that is formed on the sample.


Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4652
Author(s):  
Nghia Tuan Duong ◽  
Yoshitaka Aoyama ◽  
Katsumi Kawamoto ◽  
Toshio Yamazaki ◽  
Yusuke Nishiyama

Three-dimensional electron diffraction crystallography (microED) can solve structures of sub-micrometer crystals, which are too small for single crystal X-ray crystallography. However, R factors for the microED-based structures are generally high because of dynamic scattering. That means R factor may not be reliable provided that kinetic analysis is used. Consequently, there remains ambiguity to locate hydrogens and to assign nuclei with close atomic numbers, like carbon, nitrogen, and oxygen. Herein, we employed microED and ssNMR dipolar-based experiments together with spin dynamics numerical simulations. The NMR dipolar-based experiments were 1H-14N phase-modulated rotational-echo saturation-pulse double-resonance (PM-S-RESPDOR) and 1H-1H selective recoupling of proton (SERP) experiments. The former examined the dephasing effect of a specific 1H resonance under multiple 1H-14N dipolar couplings. The latter examined the selective polarization transfer between a 1H-1H pair. The structure was solved by microED and then validated by evaluating the agreement between experimental and calculated dipolar-based NMR results. As the measurements were performed on 1H and 14N, the method can be employed for natural abundance samples. Furthermore, the whole validation procedure was conducted at 293 K unlike widely used chemical shift calculation at 0 K using the GIPAW method. This combined method was demonstrated on monoclinic l-histidine.


Nanoscale ◽  
2021 ◽  
Author(s):  
Shaoyang Xiong ◽  
Yue Qin ◽  
Linhong Li ◽  
Guoyong Yang ◽  
Maohua Li ◽  
...  

In order to meet the requirement of thermal performance with the rapid development of high-performance electronic devices, constructing a three-dimensional thermal transport skeleton is an effective method for enhancing thermal...


2010 ◽  
Vol 43 ◽  
pp. 651-656
Author(s):  
Ai Xin Feng ◽  
Yu Peng Cao ◽  
Chuan Chao Xu ◽  
Huai Yang Sun ◽  
Gui Fen Ni ◽  
...  

In the experiment, we use pulsed laser to conduct discrete scratching on Ni-containing stainless steel protective coatings to test residual stress situation after the matrix is scratched; then to analyze the the impact of the impact stress wave on coating - substrate bonding strength according to the test results, finally to infer the laser power density range within which it occurs coating failure. The study shows that: after laser discrete scratching, the residual stress of the center of the laser-loaded point on matrix surface gradually reduces when the pulsed laser power density increases. The matrix produces a corresponding residual compressive stress under the laser power density reaches a certain value. The actual failure threshold values are 12.006 GW/cm2, 11.829GW/cm2 and 12.193GW/cm2 measured by the three-dimensional topography instrument testing the discrete scratch point of three groups of samples and verified by using a microscope


1998 ◽  
Vol 10 (35) ◽  
pp. 7923-7927 ◽  
Author(s):  
Guo-Wei Yang ◽  
Jin-Bin Wang ◽  
Qui-Xiang Liu

2008 ◽  
Vol 57 (8) ◽  
pp. 4960
Author(s):  
Yao Yao ◽  
Fang Zhong-Hui ◽  
Zhou Jiang ◽  
Li Wei ◽  
Ma Zhong-Yuan ◽  
...  

1999 ◽  
Vol 581 ◽  
Author(s):  
K.M. Hassan ◽  
A.K. Sharma ◽  
J. Narayan ◽  
J.F. Muth ◽  
C.W. Teng ◽  
...  

ABSTRACTWe have fabricated Ge nanostructures buried in AlN and Al2O3 matrices grown on Si(111) and sapphire substrates by pulsed laser deposition. Our approach involved three-dimensional island growth of low band-gap material followed by a layer of wide band-gap material. The nanodots were uniformly distributed in between alternating layers of AlN or Al2O3. It was observed that these nanodots exhibit crystalline structure when grown at 300-500 °C. The average size of Ge islands was determined to be ∼5-15 nm, which could be varied by controlling laser deposition and substrate parameters. The Raman spectrum showed a peak of the Ge-Ge vibrational mode downward shifted upto 295 cm− which is caused by quantum confinement of phonons in the Ge-dots. The photoluminescence of the Ge dots (size ∼15nm) was blue shifted by ∼0.266 eV from the bulk Ge value of 0.73 eV at 77 K, resulting in a distinct peak at ∼1.0 eV. The spectral positions of both E1 and E2 transitions in the absorption spectra at room temperature and 77K shift toward higher energy as the Ge dot size decreases. The interpretation of these behaviors in terms of quantum confinement is discussed in this work, and the importance of pulsed laser deposition in fabricating novel nanostructures is emphasized


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