Abstract
This work is concerned with a study of chalcogenide glasses doped with the rare-earth element erbium. The study was carried out on samples of the quasibinary system As2S3−GeS2 doped with erbium at the concentrations of 0, 0.01, 0.1, 0.5 and 1 at %. Raman spectroscopy was used to identify the presence of particular structural units in the glass matrix. The spectra of all the samples are characterized by an intense peak appearing as a consequence of the stretching of the As-S and Ge-S bonds. Further, several low-intensity peaks of different origin were also registered. These peaks arise due to the stretching of the bonds in the ring S8 and the bonds resulting from the existence of the ethane-type molecules (GeSn) in some of the samples. The peaks in the spectrum of the sample with the highest erbium content are characterized by the peaks that can be attributed to the stretching of the bond Er-S.
Rare-Earth Doped Chalcogenide Glasses for Photonics: Photon Trapping
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