Optical Modelling of GaAs/GaSb Core-Shell Cone Topped Octagonal Faced Nanopillar Array with Periodic Trapezoidal Textured Cut for High Photon Trapping Efficiency

Proficiency in light reflectance mitigation is the most crucial factor for high photodetector performance. In this respect light trapping mechanism based on nanostructures or microstructures such as nanopillars, nanocones, nanopyramids have emerged as the most promising candidate for reducing overall light reflectance. This could be attributed to its effective large irradiation area, multiple scattering of incident light as well as increased path length of incident rays in these nanostructures. This paper proposes an optical modelling of a GaAs/GaSb material based vertically oriented core-shell cone topped octagonal shaped nanopillar structure with periodical trapezoidal nanotexturization over it to be deployed over a circular planar detector’s surface of radius 50um. The geometrical analytical investigation of the proposed model exhibits a 0.999 overall absorbance and 0.995A/W photoresponsivity along with 87% EQE at 1um operating wavelength.

Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

Group-IV photonic devices that contain Si and Ge are very attractive due to their compatibility with integrated silicon photonics platforms. Despite the recent progress in fabrication of Ge/Si quantum dot (QD) photodetectors, their low quantum efficiency still remains a major challenge and different approaches to improve the QD photoresponse are under investigation. In this paper, we report on the fabrication and optical characterization of Ge/Si QD pin photodiodes integrated with photon-trapping microstructures for near-infrared photodetection. The photon traps represent vertical holes having 2D periodicity with a feature size of about 1 μm on the diode surface, which significantly increase the normal incidence light absorption of Ge/Si QDs due to generation of lateral optical modes in the wide telecommunication wavelength range. For a hole array periodicity of 1700 nm and hole diameter of 1130 nm, the responsivity of the photon-trapping device is found to be enhanced by about 25 times at λ=1.2 μm and by 34 times at λ≈1.6 μm relative to a bare detector without holes. These results make the micro/nanohole Ge/Si QD photodiodes promising to cover the operation wavelength range from the telecom O-band (1260–1360 nm) up to the L-band (1565–1625 nm).

Superior Light Absorbing CdS/Vanadium Sulphide Nanowalls @ TiO2 Nanorod Ternary Heterojunction Photoanodes for Solar Water Splitting

Vanadium Sulphide is an emerging infrared active photocatalyst that has not been utilized to its maximum potential. Herein, we report the application of highly textured photon trapping infrared active vanadium...