Infra-red, electron paramagnetic resonance and X-ray photoemission spectral properties of point defects in silica from first-principle calculations

1999 ◽  
Vol 245 (1-3) ◽  
pp. 175-182 ◽  
Author(s):  
Gianfranco Pacchioni ◽  
Mirko Vitiello
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Point Defects ◽  
Spectral Properties ◽  
First Principle ◽  
Paramagnetic Resonance ◽  
X Ray ◽  
First Principle Calculations ◽  
Infra Red ◽  
Electron Paramagnetic

scholarly journals Combined EPR and Photoluminescence Study of Electron and Proton Irradiated 3C-SiC

2019 ◽  
Vol 963 ◽  
pp. 301-304
Author(s):  
Abdul Al Atem ◽  
Victor Bratus ◽  
Bruno Canut ◽  
Jeremie Lefevre ◽  
Gérard Guillot ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electron Paramagnetic Resonance ◽  
Point Defects ◽  
Epr Spectroscopy ◽  
Proton Irradiation ◽  
Paramagnetic Resonance ◽  
Photoluminescence Study ◽  
Infra Red ◽  
Cubic Silicon Carbide ◽  
Electron Paramagnetic

Combined Photoluminescence (PL) and electron paramagnetic resonance (EPR) spectroscopy have been used to characterize cubic silicon carbide (3C-SiC) samples after electron and proton irradiation. We have studied the effects of the thermal annealing (500-1000°C) on the PL intensity in the visible and the near infra-red (NIR) ranges and identified the point defects formation after these two processes of irradiation.

Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface

2009 ◽  
Vol 156-158 ◽  
pp. 145-148 ◽  
Author(s):  
Daniel Kropman ◽  
E. Mellikov ◽  
K. Lott ◽  
Tiit Kärner ◽  
Ivo Heinmaa ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Magnetic Resonance ◽  
Fermi Level ◽  
Point Defects ◽  
Interface Properties ◽  
Hydrogen Ions ◽  
Paramagnetic Resonance ◽  
Proposed Model ◽  
P Type ◽  
Electron Paramagnetic

The results of investigation of the point defect generation and interaction with impurities in the Si-SiO2 system during the process of its formation by means of electron paramagnetic resonance (EPR) and nucleous magnetic resonance (NMR) technique are presented. It has been shown that the diference in point defects interaction with hydrogen at the Si-SO2 interface with n- and p-type conductivity are connected with the sign of hydrogen ions incorporation dependence on the Fermi level position in accordance with the proposed model. The interface properties may be improved by laser irradiation.

Sign in / Sign up

Export Citation Format

Share Document