Variable-range hopping conductivity and magnetoresistance in p-type Cu2GeSe3

2003 ◽  
Vol 64 (9-10) ◽  
pp. 1725-1727 ◽  
Author(s):  
G. Marcano ◽  
R. Márquez
Keyword(s):  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range ◽  
P Type

Variable-range hopping conductivity in thin film of the ladder compound [Ca1+δCu2O3]4

2003 ◽  
Vol 94 (9) ◽  
pp. 5912-5917 ◽  
Author(s):  
K. G. Lisunov ◽  
B. Raquet ◽  
H. Rakoto ◽  
J. M. Broto ◽  
E. Arushanov ◽  
...  
Keyword(s):  
Thin Film ◽  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range

1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

2015 ◽  
Vol 1770 ◽  
pp. 25-30 ◽  
Author(s):  
V.C. Lopes ◽  
A.J. Syllaios ◽  
D. Whitfield ◽  
K. Shrestha ◽  
C.L. Littler
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Noise Component ◽  
Variable Range ◽  
Noise Measurements ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

Variable-range-hopping conductivity in compensatedn-type GaAs

1984 ◽  
Vol 30 (12) ◽  
pp. 7287-7289 ◽  
Author(s):  
M. Benzaquen ◽  
D. Walsh
Keyword(s):  
Variable Range Hopping ◽  
Hopping Conductivity ◽  
Variable Range
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