1/f Noise in Mott Variable Range Hopping Conduction in p-type Amorphous Silicon

ABSTRACTWe report on electrical conductivity and noise measurements made on p-type hydrogenated amorphous silicon (a-Si:H) thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD). The temperature dependent electrical conductivity can be described by the Mott Variable Range Hopping mechanism. The noise at temperatures lower than ∼ 400K is dominated by a 1/f component which follows the Hooge model and correlates with the Mott conductivity. At high temperatures there is an appreciable G-R noise component.

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Variable range hopping in hydrogenated amorphous silicon

physica status solidi (c) ◽

10.1002/pssc.200303652 ◽

2004 ◽

Vol 1 (1) ◽

pp. 101-104 ◽

Cited By ~ 8

Author(s):

I. P. Zvyagin ◽

I. A. Kurova ◽

N. N. Ormont

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Variable Range Hopping ◽

Variable Range ◽

Hydrogenated Amorphous

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A temperature-dependent pre-exponential factor in Efros–Shklovskii variable range hopping conduction in p-type CuInTe2

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(02)01023-8 ◽

2003 ◽

Vol 18 (1-3) ◽

pp. 292-293 ◽

Cited By ~ 4

Author(s):

C. Quiroga ◽

R. Oentrich ◽

I. Bonalde ◽

E. Medina D. ◽

S.M. Wasim ◽

...

Keyword(s):

Hopping Conduction ◽

Variable Range Hopping ◽

Temperature Dependent ◽

Exponential Factor ◽

Variable Range ◽

P Type ◽

Variable Range Hopping Conduction

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Switching Behavior in p-Type Hydrogenated Amorphous Silicon with One and Two Blocking Contacts

MRS Proceedings ◽

10.1557/proc-715-12.2 ◽

2002 ◽

Vol 715 ◽

Cited By ~ 6

Author(s):

Jian Hu ◽

Howard M. Branz ◽

Richard S. Crandall ◽

Scott Ward ◽

Qi Wang

Keyword(s):

Amorphous Silicon ◽

Electrical Breakdown ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Switching Behavior ◽

Metal Contacts ◽

Resistance State ◽

Metal Filament ◽

P Type ◽

Hydrogenated Amorphous

AbstractWe compare switching behaviour in Cr/a-Si:H(p)/Ag and c-Si(p)/a-Si:H(p)/Ag structures containing p-type hydrogenated amorphous silicon. The a-Si:H layer is made by hot wire chemical vapor deposition. We observed that the switching is polarity-dependent only in the sample on c-Si(p). Switching to a low-resistance state occurs at 0.4 mA/cm2 when any of the metal contacts are biased positive. When the c-Si(p) is biased positive holes are injected and no switching occurs even up to 4 A/cm2. We suggest that the switching requires a blocking metal/a-Si(p), possibly because local electrical breakdown initiates metal filament formation.

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Crossover from Nearest-Neighbor Hopping Conduction to Efros–Shklovskii Variable-Range Hopping Conduction in Hydrogenated Amorphous Silicon Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.111203 ◽

2009 ◽

Vol 48 (11) ◽

pp. 111203 ◽

Cited By ~ 40

Author(s):

Abdullah Yildiz ◽

Necmi Serin ◽

Tülay Serin ◽

Mehmet Kasap

Keyword(s):

Amorphous Silicon ◽

Nearest Neighbor ◽

Hydrogenated Amorphous Silicon ◽

Silicon Films ◽

Hopping Conduction ◽

Variable Range Hopping ◽

Variable Range ◽

Hydrogenated Amorphous ◽

Variable Range Hopping Conduction

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1/f Noise Measurements of Hydrogenated Amorphous Silicon-Carbon Alloys

MRS Proceedings ◽

10.1557/proc-336-631 ◽

1994 ◽

Vol 336 ◽

Cited By ~ 1

Author(s):

H. M. Dyalsingh ◽

G. M. Khera ◽

J. Kakalios ◽

C. C. Tsai ◽

R. A. Street

Keyword(s):

Amorphous Silicon ◽

Hydrogenated Amorphous Silicon ◽

Mobility Edge ◽

Silicon Carbon ◽

Noise Measurements ◽

Gaussian Statistics ◽

Non Gaussian ◽

P Type ◽

Hydrogenated Amorphous ◽

Carbon Concentrations

ABSTRACTMeasurements of the optical, electronic and 1/f noise properties for a series of n-type doped hydrogenated amorphous silicon carbide thin films with varying gas phase concentrations of CH4 are described. The increase in the optical absorption edge of the n-type a-SiCx:H films with the addition of carbon is slower than in p-type films. Studies of the variation in the non-Gaussian statistics which characterize the 1/f noise indicate that the disorder at the mobility edge is greater for films with higher carbon concentrations.

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Effect of B Boping Concentration on the Properties of P-Type Hydrogenated Amorphous Silicon Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.239-242.247 ◽

2011 ◽

Vol 239-242 ◽

pp. 247-251

Author(s):

Wei Yuan Wang ◽

Qing Nan Zhao ◽

Wen Hui Yuan ◽

Pu Lei Yang ◽

Hong Yu Liang ◽

...

Keyword(s):

Amorphous Silicon ◽

Band Gap ◽

Doping Concentration ◽

Optical Band Gap ◽

Hydrogenated Amorphous Silicon ◽

Chemical Vapor ◽

Float Glass ◽

B Doping ◽

P Type ◽

Hydrogenated Amorphous

P-type hydrogenated amorphous silicon films were deposited on float glass substrates by plasma enhanced chemical vapor deposition (PECVD). The effect of B doping concentration on the properties of the films was studied. The structure of the films was investigated by X-ray diffraction (XRD). The transmittance of the films was measured using an UV–Vis–NIR spectrophotometer in the wavelength range 200–2600nm.The film thickness was fitted by NKD-7000W optical thin film analysis system. The optical band gap of the films was obtained by the Tauc method. The conductivity of the films was tested by Electrometer Keithley 6517B. The results show that the optical band gap of the films changes from 1.93 eV to 1.65eV with the increase of B doping concentration, the highest conductivity of the film doped with 1.86% B2H6is 7.82 × 10-4S/cm.

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