Deep level effects on the characteristics of Al0.24Ga0.76As/In0.20Ga0.80As/GaAs and In0.48Ga0.52P/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy
2000 ◽
Vol 44
(11)
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pp. 1909-1916
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1995 ◽
Vol 11
(10)
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pp. 1079-1082
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2002 ◽
Vol 49
(3)
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pp. 354-360
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2000 ◽
Vol 47
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pp. 1115-1117
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2011 ◽
Vol 29
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pp. 03C107
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2006 ◽
Vol E89-C
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pp. 906-912
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2005 ◽