Capacitance and drain current deep level transient spectroscopy measurements on molecular beam epitaxy grown GaAs/ln0·25Ga0·75As/Al0·3Ga0·7As high electron mobility transistors

Molecular Beam ◽

Deep Level ◽

Drain Current ◽

High Electron ◽

High Electron Mobility ◽

Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy

Applied Physics Letters ◽

10.1063/1.4813862 ◽

2013 ◽

Vol 103 (3) ◽

pp. 033509 ◽

Cited By ~ 45

Author(s):

A. Sasikumar ◽

A. R. Arehart ◽

S. Martin-Horcajo ◽

M. F. Romero ◽

Y. Pei ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level ◽

Drain Current ◽

High Electron ◽

High Electron Mobility ◽

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

Journal of Applied Physics ◽

10.1063/1.3702458 ◽

2012 ◽

Vol 111 (7) ◽

pp. 073713 ◽

Cited By ~ 10

Author(s):

Salah Saadaoui ◽

Mohamed Mongi Ben Salem ◽

Malek Gassoumi ◽

Hassen Maaref ◽

Christophe Gaquière

Keyword(s):

Electron Mobility ◽

Deep Level ◽

High Electron ◽

High Electron Mobility ◽

A deep‐level transient spectroscopy study of high electron mobility transistors subjected to lifetime stress tests

Journal of Applied Physics ◽

10.1063/1.343667 ◽

1989 ◽

Vol 66 (11) ◽

pp. 5613-5617 ◽

Cited By ~ 9

Author(s):

R. Magno ◽

R. Shelby ◽

W. T. Anderson

Keyword(s):

Electron Mobility ◽

Deep Level ◽

High Electron ◽

Spectroscopy Study ◽

Stress Tests ◽

High Electron Mobility ◽

Deep level effects on the characteristics of Al0.24Ga0.76As/In0.20Ga0.80As/GaAs and In0.48Ga0.52P/In0.20Ga0.80As/GaAs high electron mobility transistors grown by solid source molecular beam epitaxy

Solid-State Electronics ◽

10.1016/s0038-1101(00)00186-6 ◽

2000 ◽

Vol 44 (11) ◽

pp. 1909-1916 ◽

Cited By ~ 1

Author(s):

S.F Yoon ◽

K.H Yip ◽

H.Q Zheng ◽

B.P Gay

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Deep Level ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

Defect Characterization in High‐Electron‐Mobility Transistors with Regrown p‐GaN Gate by Low‐Frequency Noise and Deep Level Transient Spectroscopy

physica status solidi (a) ◽

10.1002/pssa.202100227 ◽

2021 ◽

Author(s):

Po-Chun (Brent) Hsu ◽

Eddy Simoen ◽

Hu Liang ◽

Brice De Jaeger ◽

Benoit Bakeroot ◽

...

Keyword(s):

Deep Level ◽

Low Frequency ◽

Frequency Noise ◽

Defect Characterization ◽

High Electron ◽

High Electron Mobility ◽

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

Applied Physics Letters ◽

10.1063/1.3326079 ◽

2010 ◽

Vol 96 (7) ◽

pp. 072107 ◽

Cited By ~ 68

Author(s):

W. Chikhaoui ◽

J.-M. Bluet ◽

M.-A. Poisson ◽

N. Sarazin ◽

C. Dua ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level ◽

High Electron ◽

Gate Leakage ◽

Spectroscopy Analysis ◽

High Electron Mobility ◽

Deep level transient spectroscopy of n-AlGaAs/GaAs high electron mobility transistors

Electronics Letters ◽

10.1049/el:19900108 ◽

1990 ◽

Vol 26 (3) ◽

pp. 159 ◽

Cited By ~ 3

Author(s):

J. Goostray ◽

H. Thomas ◽

D.V. Morgan ◽

E. Kohn ◽

A. Christou ◽

...

Keyword(s):

Electron Mobility ◽

Deep Level ◽

High Electron ◽

High Electron Mobility ◽

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

Semiconductors ◽

10.1134/s1063782613070087 ◽

2013 ◽

Vol 47 (7) ◽

pp. 1008-1012 ◽

Cited By ~ 2

Author(s):

Malek Gassoumi ◽

Hana Mosbahi ◽

Mohamed Ali Zaidi ◽

Christophe Gaquiere ◽

Hassen Maaref

Keyword(s):

Surface Passivation ◽

Deep Level ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Transient Spectroscopy ◽

Effect Of Surface

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Applied Physics Letters ◽

10.1063/5.0078367 ◽

2021 ◽

Vol 119 (23) ◽

pp. 233502

Author(s):

Yixu Yao ◽

Qimeng Jiang ◽

Sen Huang ◽

Xinhua Wang ◽

Xiaorong Luo ◽

...

Keyword(s):

Threshold Voltage ◽

Deep Level ◽

Interface State ◽

High Electron ◽

High Electron Mobility ◽

Voltage Instability ◽

Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness

IEEE Transactions on Electron Devices ◽

10.1109/16.987103 ◽

2002 ◽

Vol 49 (3) ◽

pp. 354-360 ◽

Cited By ~ 7

Author(s):

Seong-June Jo ◽

Jeong Hoon Kim ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

Critical Layer Thickness ◽

High Electron Mobility ◽

Electron Mobility Transistors