Fabrication and characterisation of double heterojunction In0.48Ga0.52P/In0.20Ga0.80As high electron mobility transistors grown by solid-source molecular beam epitaxy

1999 ◽  
Vol 43 (11) ◽  
pp. 2097-2101
Author(s):  
S.F. Yoon ◽  
B.P. Gay ◽  
H.Q. Zheng ◽  
H.T. Kam ◽  
J. Degenhardt
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