Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy
2000 ◽
Vol 47
(5)
◽
pp. 1115-1117
◽
2002 ◽
Vol 49
(3)
◽
pp. 354-360
◽
2011 ◽
Vol 29
(3)
◽
pp. 03C107
◽
2006 ◽
Vol E89-C
(7)
◽
pp. 906-912
◽
2005 ◽