Preparation of hard and ultra water-repellent silicon oxide films by microwave plasma-enhanced CVD at low substrate temperatures

2003 ◽  
Vol 435 (1-2) ◽  
pp. 161-164 ◽  
Author(s):  
Yunying Wu ◽  
Hiroyuki Sugimura ◽  
Yasushi Inoue ◽  
Osamu Takai
Keyword(s):  
Silicon Oxide ◽  
Microwave Plasma ◽  
Oxide Films ◽  
Water Repellent ◽  
Plasma Enhanced Cvd ◽  
Substrate Temperatures

Reduction of carbon impurities in silicon oxide films prepared by rf plasma-enhanced CVD

2001 ◽  
Vol 390 (1-2) ◽  
pp. 88-92 ◽  
Author(s):  
Katsuya Teshima ◽  
Yasushi Inoue ◽  
Hiroyuki Sugimura ◽  
Osamu Takai
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Rf Plasma ◽  
Plasma Enhanced Cvd ◽  
Carbon Impurities

Effects of Applied Magnetic Fields on Silicon Oxide Films Formed by Microwave Plasma CVD

1988 ◽  
Vol 27 (Part 2, No. 10) ◽  
pp. L1962-L1965 ◽  
Author(s):  
Takuya Fukuda ◽  
Kazuo Suzuki ◽  
Shigeru Takahashi ◽  
Yasuhiro Mochizuki ◽  
Michio Ohue ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Silicon Oxide ◽  
Microwave Plasma ◽  
Oxide Films ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd

Room-temperature deposition of high-purity silicon oxide films by RF plasma-enhanced CVD

2001 ◽  
Vol 146-147 ◽  
pp. 451-456 ◽  
Author(s):  
Katsuya Teshima ◽  
Yasushi Inoue ◽  
Hiroyuki Sugimura ◽  
Osamu Takai
Keyword(s):  
High Purity ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Rf Plasma ◽  
Plasma Enhanced Cvd ◽  
High Purity Silicon ◽  
Temperature Deposition

Deposition of Thin Insulating films by Plasma Enhanced CVD

1985 ◽  
Vol 54 ◽  
Author(s):  
G. Lucovsky ◽  
P. D. Richard ◽  
D. V. Tsu ◽  
R. J. Markunas
Keyword(s):  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Active Species ◽  
Plasma Region ◽  
Plasma Enhanced Cvd ◽  
Insulating Films ◽  
Precursor Molecules ◽  
Substrate Temperatures ◽  
Low Temperature Process

ABSTRACTWe discuss a new low temperature process for the deposition of electronic quality thin films of silicon oxide and nitride. In contrast to conventional plasma enhanced chemical vapor deposition [PECVD], this process involves the remote excitation of one of the gas reactants followed by the extraction of the active species out of the plasma region where they react to generate precursor molecules. The precursors undergo a CVD reaction at a heated substrate to form the desired thin film. The process is called remote PECVD [RPECVD]. Insulators produced in this way show significant reductions in the incorporation of impurity groups such as SiH and SiOH relative to films grown by the PECVD process at the same substrate temperatures.

Permeation mechanisms of pulsed microwave plasma deposited silicon oxide films for food packaging applications

2008 ◽  
Vol 41 (13) ◽  
pp. 135207 ◽  
Author(s):  
Michael Deilmann ◽  
Mirko Grabowski ◽  
Sebastian Theiß ◽  
Nikita Bibinov ◽  
Peter Awakowicz
Keyword(s):  
Food Packaging ◽  
Silicon Oxide ◽  
Microwave Plasma ◽  
Oxide Films
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