Room-temperature deposition of high-purity silicon oxide films by RF plasma-enhanced CVD

2001 ◽  
Vol 146-147 ◽  
pp. 451-456 ◽  
Author(s):  
Katsuya Teshima ◽  
Yasushi Inoue ◽  
Hiroyuki Sugimura ◽  
Osamu Takai
Keyword(s):  
High Purity ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Rf Plasma ◽  
Plasma Enhanced Cvd ◽  
High Purity Silicon ◽  
Temperature Deposition

Reduction of carbon impurities in silicon oxide films prepared by rf plasma-enhanced CVD

2001 ◽  
Vol 390 (1-2) ◽  
pp. 88-92 ◽  
Author(s):  
Katsuya Teshima ◽  
Yasushi Inoue ◽  
Hiroyuki Sugimura ◽  
Osamu Takai
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Rf Plasma ◽  
Plasma Enhanced Cvd ◽  
Carbon Impurities

Investigation of silicon oxide films prepared by room-temperature ion plating

1998 ◽  
Vol 83 (2) ◽  
pp. 1107-1113 ◽  
Author(s):  
Ching-Fa Yeh ◽  
Tai-Ju Chen ◽  
Ching-Lin Fan ◽  
Jiann-Shiun Kao
Keyword(s):  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Ion Plating

The Deposition of Silicon Oxide Films by LPCVD at Temperatures as Low as 100°C from a New Liquid Source

1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Temperature Sensitive ◽  
Oxide Layers ◽  
Low Temperature Deposition ◽  
Liquid Source ◽  
Temperature Deposition ◽  
Higher Temperature

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

High-k (k=30) amorphous hafnium oxide films from high rate room temperature deposition

2011 ◽  
Vol 98 (25) ◽  
pp. 252903 ◽  
Author(s):  
Flora M. Li ◽  
Bernhard C. Bayer ◽  
Stephan Hofmann ◽  
James D. Dutson ◽  
Steve J. Wakeham ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Room Temperature ◽  
Oxide Films ◽  
High Rate ◽  
High K ◽  
Temperature Deposition
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