In situ ellipsometric diagnostics of multilayer thin film deposition during sputtering

1998 ◽  
Vol 313-314 ◽  
pp. 511-515 ◽  
Author(s):  
Xiang Gao ◽  
Darin W Glenn ◽  
John A Woollam
1996 ◽  
Vol 428 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.


2004 ◽  
Vol 10 (S02) ◽  
pp. 1118-1119 ◽  
Author(s):  
Andrew M Minor ◽  
Francis Allen ◽  
Velimir R Radmilovic ◽  
Eric A Stach ◽  
Thomas Schenkel

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.


2011 ◽  
Vol 19 (14) ◽  
pp. 12969 ◽  
Author(s):  
Qing-Yuan Cai ◽  
Yu-Xiang Zheng ◽  
Dong-Xu Zhang ◽  
Wei-Jie Lu ◽  
Rong-Jun Zhang ◽  
...  

1992 ◽  
Author(s):  
J. P. Zheng ◽  
D. H. Kim ◽  
S. Y. Dong ◽  
C. Lehane ◽  
W. P. Shen ◽  
...  

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