Silicon nitride thin-film deposition by LPCVD with in situ HF vapor cleaning and its application to stacked DRAM capacitor fabrication

1994 ◽  
Vol 41 (5) ◽  
pp. 703-708 ◽  
Author(s):  
M. Ino ◽  
N. Inoue ◽  
M. Yoshimaru
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Capacitor Fabrication

scholarly journals Measurements Of Stress Evolution During Thin Film Deposition

1996 ◽  
Vol 428 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Stress ◽  
Radius Of Curvature ◽  
Stress Evolution ◽  
Rectangular Array ◽  
Thin Film Stress ◽  
Ccd Detector

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.

In situ ellipsometric diagnostics of multilayer thin film deposition during sputtering

1998 ◽  
Vol 313-314 ◽  
pp. 511-515 ◽  
Author(s):  
Xiang Gao ◽  
Darin W Glenn ◽  
John A Woollam
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Multilayer Thin Film

Nanoscale Holes Formed by In Situ Thin Film Deposition in a FIB

2004 ◽  
Vol 10 (S02) ◽  
pp. 1118-1119 ◽  
Author(s):  
Andrew M Minor ◽  
Francis Allen ◽  
Velimir R Radmilovic ◽  
Eric A Stach ◽  
Thomas Schenkel
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

The Plasma Deposition of Semiconductor Multilater Structures

1989 ◽  
Vol 165 ◽  
Author(s):  
Masataka Hirose ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray

AbstractThe early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

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