Characterization of self-assembled Ge islands on Si(100) by atomic force microscopy and transmission electron microscopy

1998 ◽  
Vol 321 (1-2) ◽  
pp. 86-91 ◽  
Author(s):  
G Wöhl ◽  
C Schöllhorn ◽  
O.G Schmidt ◽  
K Brunner ◽  
K Eberl ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

Characterization of Geoinspired and Synthetic Chrysotile Nanotubes by Atomic Force Microscopy and Transmission Electron Microscopy

2007 ◽  
Vol 17 (16) ◽  
pp. 3332-3338 ◽  
Author(s):  
S. Piperno ◽  
I. Kaplan-Ashiri ◽  
S. R. Cohen ◽  
R. Popovitz-Biro ◽  
H. D. Wagner ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

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