Photo-induced preparation of (Ta2O5)1−x(TiO2)x dielectric thin films using sol–gel processing with xenon excimer lamps

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

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Submicrometric gratings fabrication from photosensitive organo-silica-hafnia thin films elaborated by sol–gel processing

Thin Solid Films ◽

10.1016/j.tsf.2012.03.093 ◽

2012 ◽

Vol 520 (19) ◽

pp. 6050-6056 ◽

Cited By ~ 1

Author(s):

Janyce Franc ◽

Vincent Barnier ◽

Francis Vocanson ◽

Emilie Gamet ◽

Maryline Lesage ◽

...

Keyword(s):

Thin Films ◽

Sol Gel ◽

Gel Processing

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Solution-sol-gel processing of lead magnesium niobate thin films

Ferroelectrics Letters Section ◽

10.1080/07315179008200854 ◽

1990 ◽

Vol 12 (2) ◽

pp. 29-34 ◽

Cited By ~ 6

Author(s):

P. Ravindranathan ◽

S. Komarneni ◽

A. S. Bhalla ◽

L. E. Cross ◽

R. Roy

Keyword(s):

Thin Films ◽

Sol Gel ◽

Lead Magnesium Niobate ◽

Magnesium Niobate ◽

Lead Magnesium ◽

Gel Processing

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The preparation of PbTiO3 thin films by sol-gel processing

Sensors and Actuators A Physical ◽

10.1016/0924-4247(93)80165-d ◽

1993 ◽

Vol 35 (3) ◽

pp. 259-263 ◽

Cited By ~ 4

Author(s):

Liu Meidong ◽

Wang Peiying ◽

Wu Guoan ◽

Rao Yunhua

Keyword(s):

Thin Films ◽

Sol Gel ◽

Gel Processing

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Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.197-198.1781 ◽

2011 ◽

Vol 197-198 ◽

pp. 1781-1784

Author(s):

Hua Wang ◽

Jian Li ◽

Ji Wen Xu ◽

Ling Yang ◽

Shang Ju Zhou

Keyword(s):

Thin Films ◽

Remanent Polarization ◽

Annealing Temperature ◽

Ferroelectric Properties ◽

Sol Gel ◽

Hysteresis Loops ◽

Si Substrates ◽

Gel Processing ◽

Coercive Electric Field ◽

Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

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