Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

Electrical Characteristics and Microstructures of Eu2O3-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 177 ◽  
pp. 197-200
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
K.L. Su ◽  
A.H. Cai ◽  
J. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Eu2O3-doped bismuth titanate (Bi1-xEuxTi3O12: BET) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BET films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0.0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (Pr) and coercive field (Ec) of the BET Film with x=0.75 were above 30μC/cm2 and 85KV/cm , respectively.

Ferroelectric Properties and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 434-435 ◽  
pp. 281-284
Author(s):  
Min Chen ◽  
A.H. Cai ◽  
X.A. Mei ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Large Leakage Current ◽  
Ferroelectric Hysteresis

Pr6O11-doped bismuth titanate (BixPryTi3O12: BPT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with y=0.06, 0.3, 1.2 and 1.5, ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with y=0.6 and 0.9, ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Film with y=0.9 were above 35μC/cm2 and 80KV/cm , respectively. After 3×1010 switching cycles, 20% degradation of 2Pr is observed in the film with y=0.9.

Effects of Annealing Temperature on Structure and Properties of PLBZT Ferroelectric Thin Films Synthesized by Sol-Gel Processing

2012 ◽  
Vol 602-604 ◽  
pp. 1461-1464
Author(s):  
Hua Wang ◽  
Li Liu ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Pyrochlore Phase ◽  
Ferroelectric Thin Films ◽  
Structure And Properties ◽  
Maximum Value ◽  
Processing Effects ◽  
Gel Processing

[Pb0.95(La0.6Bi0.4)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on ITO-coated glass by sol-gel processing. Effects of annealing temperature on structure and properties of PLBZT have been investigated. With the increase of annealing temperature from 500°C to 550°C, the remanent polarization Pr increase slightly to the maximum value of 25.4μC/cm2 due to the improvement in crystallization of PLBZT films. However, when the annealing temperature is more than 550°C, the pyrochlore phase appear and degrade the Pr of PLBZT thin films. The lowest leakage current density of 1.8×10-9 A/cm2 can be observed in PLBZT thin films when the annealing temperature is 550°C.

Ferroelectric Properties of Sol-Gel Derived Ca1-xSrxBi4Ti4O15 Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 100-102 ◽  
Author(s):  
Su Hua Fan ◽  
Jing Xu ◽  
Guang Da Hu ◽  
Bo He ◽  
Feng Qing Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fatigue Resistance ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
High Concentration ◽  
Gel Method ◽  
Si Substrates

Ca1-xSrxBi4Ti4O15 thin films were fabricated by sol-gel method on Pt(100)/Ti/SiO2/Si substrates. Influence of Sr content on the microstructure and ferroelectric properties of Ca1-xSrxBi4Ti4O15 thin films were systematically studied. The results indicate that Ca0.4Sr0.6Bi4Ti4O15 thin film has better ferroelectric properties with remanent polarization (2Pr) of 29.1+C/cm2, coercive field (2Ec) of 220 kV/cm. Furthermore, the film has good fatigue resistance. The better ferroelectric properties of Ca0.4Sr0.6Bi4Ti4O15 thin film originate from the relatively high concentration of a-axis oriented grains.

THICKNESS-DEPENDENT MICROSTRUCTURES AND ELECTRICAL PROPERTIES OF LiTaO3 THIN FILMS PREPARED BY A Sol-Gel PROCESS

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3404-3411
Author(s):  
M. C. KAO ◽  
H. Z. CHEN ◽  
S. L. YOUNG ◽  
C. C. LIN ◽  
C. C. YU
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Relative Dielectric Constant ◽  
Coating Technology ◽  
Si Substrates ◽  
Sol Gel Process

LiTaO 3 thin films were deposited on Pt / Ti / SiO 2/ Si substrates by means of a sol-gel spin-coating technology and rapid thermal annealing (RTA). The influence of various annealing treatments on the characteristics of the thin films were studied by varying the single-annealed-layer thickness (50 ~ 200 nm ) and heating temperatures (500 ~ 800° C ) of the samples. Experimental results reveal that the single-annealed-layer strongly influences grain size, dielectricity and ferroelectricity of LiTaO 3 thin films. The grain size of LiTaO 3 thin film decreases slightly with increasing thickness of the single-annealed-layer, and highly c-axis orientated LiTaO 3 films can be obtained for a single-annealed-layer of 50 nm. When the thickness of the single-annealed-layer was increased from 50 to 200 nm, the relative dielectric constant of LiTaO 3 thin film decreased from 65 to 35, but the dielectric loss factor (tanδ) was increased. The LiTaO 3 films with the single-annealed-layer of 50 nm showed excellent ferroelectric properties in terms of a remanent polarization ( P r) of 12.3 μ C /cm2 (Ec ∼ 60 kV/cm), and a low current density of 5.2×l0-8 A /cm2 at 20 kV/cm.

Temperature-dependent ferroelectric properties of (Pb0.75La0.25)TiO3 thin films

2004 ◽  
Vol 19 (6) ◽  
pp. 1638-1642
Author(s):  
S.T. Zhang ◽  
J.P. Li ◽  
Y.F. Chen ◽  
Z.G. Liu ◽  
N.B. Ming
Keyword(s):  
Thin Films ◽  
Fatigue Resistance ◽  
Room Temperature ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Saturated Polarization

Polycrystalline (Pb0.75La0.25)TiO3 (PLT25) thin films have been fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. The room-temperature structures and dielectric properties are studied by x-ray diffraction, scanning electron microscopy, and HP4294A impedance/phase analyzer. The temperature-dependent ferroelectric properties are systematically investigated by using a RT66A ferroelectric tester combined with a temperature-controllable vacuum chamber. For well-saturated hysteresis loops, with the temperature decrease from 295 to 97 K, the coercive field (Ec) and remanent polarization (Pr) increase and the saturated polarization (Ps) is almost temperature-independent. However, this is not the case for the unsaturated hysteresis loops. Temperature-dependent fatigue-resistance of the PLT25 films is also experimentally established: after 2.22 × 109 switching cycles, the nonvolatile polarizationdecreases 38% when measured at room-temperature and it decreases 15% at 97 K. The nature and population of point defects and their effects on the subtle variations of the Ec, Ps, Pr, and fatigue-resistance against temperature are discussed in detail.

Electrical Characteristics and Microstructures of Pr2O3-Doped Bi4Ti3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 370-373
Author(s):  
Chong Qing Huang ◽  
X.A. Mei ◽  
M. Chen ◽  
B. Li
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Differential Resistance ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates ◽  
Ferroelectric Hysteresis

Pr2O3-doped bismuth titanate (Bi4-xPrxTi3O12: BPT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the structures and ferroelectric properties of the films were investigated. XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. For samples with x=0..0 , 0.25, 1.0 and 1.25, I-E characteristics exhibited negative differential resistance behaviors and their ferroelectric hysteresis loops were characterized by large leakage current, whereas for samples with x=0.5 and 0.75, I-E characteristics were simple ohmic behaviors and their ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BPT Film with x=0.75 were above 30μC/cm2 and 75KV/cm , respectively.

The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing

1994 ◽  
Vol 361 ◽  
Author(s):  
Wan In Lee ◽  
J.K. Lee ◽  
Elsub Chung ◽  
C.W. Chung ◽  
I.K. Yoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Current Level ◽  
Pzt Thin Films ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTPZT (Zr/Ti = 53/47), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT), and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM and TEM. Both crystallographic orientation and grain size of PZT films can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By doping with both Sc and Nb, the fatigue performance of the PZT films was considerably improved and the coercive field was decreased, while the remanent polarization was not changed. In addition, the effect of dopants on the leakage current level of PZT films was studied.

Improvement in Ferroelectric Properties of Sol-Gel Derived SrBi2Ta2O9 thin films with seeding layers

2002 ◽  
Vol 718 ◽  
Author(s):  
Ching-Chich Leu ◽  
Chao-Hsin Chien ◽  
Ming-Jui Yang ◽  
Ming-Che Yang ◽  
Tiao-Yuan Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Strontium Bismuth Tantalate ◽  
Seeding Layer ◽  
Si Substrates ◽  
Nucleation Sites

AbstractThe effects of a seeding layer, which was deposited on Pt/TiO2/SiO2/Si substrates using magnetron sputtering, on the characteristics of sol-gel-deposited strontium-bismuth-tantalate (SBT) thin films are investigated. The seeding layer serves as nucleation sites so homogeneous crystalline SBT films of bismuth-layered structure (BLS) with fine grains are successfully obtained by 750°C rapid thermal annealing in O2 ambient. The remanent polarization (2Pr) improves from 12.1 to 18.8 μC/cm2 with the addition of the seeding layer. In addition, the seeding layer also results in a lower nucleation temperature, allowing the use of 700°C annealing for 10 min to grow SBT films that are fully crystallized with BLS phase and shows good ferroelectric properties. Finally, crystallinity and microstructures of SBT films are found to be strongly dependent on the thickness of the seeding layer. Optimum Ta-seeded SBT thin film crystallized at 700°C for 10min depicts a higher 2Pr value (12.9 μC/cm2 (@5V) than that of the un-seeded films crystallized at 750°C for 1min.

Study on Ferroelectric Properties of Nd-Doped Bi4Ti3O12 Thin Films Prepared by Sol-Gel Method

2007 ◽  
Vol 336-338 ◽  
pp. 146-148
Author(s):  
Y.H. Sun ◽  
X.B. Liu ◽  
Min Chen ◽  
J. Liu ◽  
S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Marked Improvement ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates

Nd-doped bismuth titanate Bi4-xNdxTi3O12 (BNT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by sol-gel method and spin-coating technique. The structures and the ferroelectric properties of the films were investigated. Nd doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 260 kV/cm, Pr and Ec of the BNT film with x=0.5 annealed at 650oC are 19 μC/cm2 and 135 kV/cm, respectively. Moreover, the BNT film with x=0.5 showed a fatiguefree behavior up to 3×1010 read/write cycles.

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