Sol-gel derived TiNb2 O7 dielectric thin films for transparent electronic applications

2017 ◽  
Vol 101 (2) ◽  
pp. 674-682 ◽  
Author(s):  
Ming-Chuan Chang ◽  
Chieh-Szu Huang ◽  
Yi-Da Ho ◽  
Cheng-Liang Huang
1997 ◽  
Vol 85 (1-3) ◽  
pp. 1399-1400 ◽  
Author(s):  
Y. Kim ◽  
E. Kang ◽  
Y.S. Kwon ◽  
W.J. Cho ◽  
C. Cho ◽  
...  

2014 ◽  
Vol 602-603 ◽  
pp. 767-770 ◽  
Author(s):  
Ching Fang Tseng ◽  
Chiu Yun Chen ◽  
Pei Wen Huang

Dielectric properties and microstructures of ZrO2thin films prepared by the sol-gel method at different annealing temperatures have been investigated. All films exhibited ZrO2(111) highly orientation perpendicular to the substrate surface and the grain size increased with increasing annealing temperature. Dielectric properties of the Ag/ZrO2/Ag/Si structure were measured by using HP 4192 Impedance Analyzer and Agilent 4155 Semiconductor Parameter Analyzer. The dependence of the microstructure and dielectric characteristics on annealing temperature was also investigated.


1994 ◽  
Vol 33 (Part 1, No. 9B) ◽  
pp. 5268-5271 ◽  
Author(s):  
Nobuyuki Soyama ◽  
Go Sasaki ◽  
Tsutomu Atsuki ◽  
Tadashi Yonezawa ◽  
Katsumi Ogi

2016 ◽  
Vol 16 (12) ◽  
pp. 12910-12913
Author(s):  
Yu-Hang Yang ◽  
Wen-Shiush Chen ◽  
Jen-Chieh Liu ◽  
Cheng-Hsing Hsu

1999 ◽  
Vol 43 (6) ◽  
pp. 1095-1099 ◽  
Author(s):  
A Cappellani ◽  
J.L Keddie ◽  
N.P Barradas ◽  
S.M Jackson

2004 ◽  
Vol 61 (1) ◽  
pp. 25-35 ◽  
Author(s):  
W. ZHU ◽  
T. YU ◽  
C. H. CHEN ◽  
X. F. CHEN ◽  
R. G. KRISHNAN

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