scholarly journals Sol-Gel Processing of LaF3 Thin Films

1998 ◽  
Vol 106 (1229) ◽  
pp. 124-126 ◽  
Author(s):  
Shinobu FUJIHARA ◽  
Munehiro TADA ◽  
Toshio KIMURA
Keyword(s):  
Sol Gel ◽  
2010 ◽  
Vol 22 (6) ◽  
pp. 666-671 ◽  
Author(s):  
Si-Jia Liu ◽  
Hua Wang ◽  
Ji-Wen Xu ◽  
Ming-Fang Ren ◽  
Ling Yang ◽  
...  

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.


2012 ◽  
Vol 520 (19) ◽  
pp. 6050-6056 ◽  
Author(s):  
Janyce Franc ◽  
Vincent Barnier ◽  
Francis Vocanson ◽  
Emilie Gamet ◽  
Maryline Lesage ◽  
...  
Keyword(s):  
Sol Gel ◽  

1990 ◽  
Vol 12 (2) ◽  
pp. 29-34 ◽  
Author(s):  
P. Ravindranathan ◽  
S. Komarneni ◽  
A. S. Bhalla ◽  
L. E. Cross ◽  
R. Roy

1993 ◽  
Vol 35 (3) ◽  
pp. 259-263 ◽  
Author(s):  
Liu Meidong ◽  
Wang Peiying ◽  
Wu Guoan ◽  
Rao Yunhua
Keyword(s):  
Sol Gel ◽  

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.


1995 ◽  
Vol 23 (1-3) ◽  
pp. 123-127 ◽  
Author(s):  
Ulagaraj Selvaraj ◽  
Alamanda V. Prasadarao ◽  
Sridhar Komarneni ◽  
Rustum Roy
Keyword(s):  
Sol Gel ◽  

2004 ◽  
Vol 848 ◽  
Author(s):  
Andrew W. Jackson ◽  
Andrew L. Hector

ABSTRACTThere is an increasing interest in sol-gel synthesis of nitrides. The ability to deposit films of these materials by dip- or spin-coating will increase the range of applications in which they are viable and is an important step toward general sol-gel processing of nitride materials.With transition metals, the ammono based analogue of the well established alkoxy route to gels is inherently difficult to control. Due to the basicity of the system, the overwhelming tendency is of the starting materials to favour particle growth which results in a precipitate rather than a stable emulsion, unless both environment and synthetic pathway are carefully controlled. Hence reports to date of sol-gel routes to nitrides describe production of powders. We report work on a sol-gel route to titanium nitride with the ammonolysis of titanium amides controlled by temperature and chemical moderators, resulting in stable emulsions useful for dip-coating.


1996 ◽  
Vol 31 (23) ◽  
pp. 6361-6368 ◽  
Author(s):  
Yu -Fu Kuo ◽  
Tseung -Yuen Tseng

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