New understanding of the α-type band structure

Using DFT band structure simulations together with semi-classical Boltzmann transport kinetics equations, we have explored the optoelectronic and transport features of MnxZn1−xTe (x = 8% and 16%) crystals. Optimization of the doping and related technological processes it is extremely important for optimization of the technological parameters. The Generalized Gradient Approximation is applied to compute the corresponding band structure parameters. We have applied the Generalized Gradient Approximation Plus U (GGA+U). We have demonstrated that MnxZn1−xTe (x = 8% and 16%) is a direct type band semiconductor with principal energy gap values equal to 2.20 and 2.0 eV for x = 8% and 16%, respectively. The energy gap demonstrates significant decrease with increasing Mn content. Additionally, the origin of the corresponding bands is explored from the electronic density of states. The optical dispersion functions are calculated from the spectra of dielectric function. The theoretical simulations performed unambiguously showed that the titled materials are simultaneously promising optoelectronic and thermoelectric devices. The theoretical simulations performed showed ways for amendment of their transport properties by replacement of particular ions.

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On the scattering of conduction electrons by magnetic impurities in semiconductors of InSb-Type and HgTe-Type band structure

physica status solidi (b) ◽

10.1002/pssb.2220720139 ◽

1975 ◽

Vol 72 (1) ◽

pp. 359-367 ◽

Cited By ~ 47

Author(s):

J. Kossut

Keyword(s):

Band Structure ◽

Magnetic Impurities ◽

Conduction Electrons ◽

Impurities In Semiconductors ◽

Type Band

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Physics of Internal Photoemission and Its Infrared Applications in the Low-Energy Limit

Advances in OptoElectronics ◽

10.1155/2016/1832097 ◽

2016 ◽

Vol 2016 ◽

pp. 1-18 ◽

Cited By ~ 3

Author(s):

Y. F. Lao ◽

A. G. U. Perera

Keyword(s):

Energy Transfer ◽

Band Structure ◽

Low Energy ◽

Band Offset ◽

Energy Transfer Mechanism ◽

Energy Limit ◽

Internal Photoemission ◽

Type Band ◽

Infrared Photodetection ◽

Novel Concept

Internal photoemission (IP) correlates with processes in which carriers are photoexcited and transferred from one material to another. This characteristic allows characterizing the properties of the heterostructure, for example, the band parameters of a material and the interface between two materials. IP also involves the generation and collection of photocarriers, which leads to applications in the photodetectors. This review discusses the generic IP processes based on heterojunction structures, characterizing p-type band structure and the band offset at the heterointerface, and infrared photodetection including a novel concept of photoresponse extension based on an energy transfer mechanism between hot and cold carriers.

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