Measurement of nitrogen in Czochralski silicon by means of infrared spectroscopy

2003 ◽  
Vol 102 (1-3) ◽  
pp. 228-232 ◽  
Author(s):  
M. Porrini ◽  
M.G. Pretto ◽  
R. Scala
2014 ◽  
Vol 1004-1005 ◽  
pp. 293-296
Author(s):  
Li Li Cai ◽  
Hui Bin Wang ◽  
Cui Ju Feng ◽  
Gui Feng Chen

The Czochralski silicon (CZ-Si) samples were irradiated with 1.5 MeV electrons and annealed at 200 - 450 °C. It was investigated the effect of irradiation dose and interstitial oxygen content [Oi] on VO concentration by Fourier transform infrared spectroscopy (FTIR). The results show that VO concentration increases with irradiation dose but not linear increase. The interstitial oxygen content has no effect on VO concentration. The VO intensity increases firstly and then decreases after annealing in samples with low oxygen content. The VO disappears at 450 °C. In high oxygen content samples, VO exhibits thermal stability and disappears at 400 °C.


1997 ◽  
Vol 12 (11) ◽  
pp. 1404-1408 ◽  
Author(s):  
R E Pritchard ◽  
M J Ashwin ◽  
J H Tucker ◽  
R C Newman ◽  
E C Lightowlers ◽  
...  

1997 ◽  
Vol 90 (3) ◽  
pp. 495-497
Author(s):  
CLAUDIO ESPOSTI ◽  
FILIPPO TAMASSIA ◽  
CRISTINA PUZZARINI ◽  
RICCARDO TARRONI ◽  
ZDENEK ZELINGER

Agronomie ◽  
2001 ◽  
Vol 21 (2) ◽  
pp. 169-178 ◽  
Author(s):  
Giovanni Gigliotti ◽  
Pier Lodovico Giusquiani ◽  
Daniela Businelli

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