Post-growth rapid thermal annealing effect on hydrogenated amorphous silicon carbide thin film

2001 ◽  
Vol 10 (3-7) ◽  
pp. 1268-1272 ◽  
Author(s):  
Y.H Wang ◽  
J Lin ◽  
C.H.A Huan ◽  
Z.C Feng ◽  
S.J Chua
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Annealing Effect ◽  
Amorphous Silicon Carbide ◽  
Hydrogenated Amorphous

Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method

2010 ◽  
Vol 428-429 ◽  
pp. 444-446 ◽  
Author(s):  
Rui Min Jin ◽  
Ding Zhen Li ◽  
Lan Li Chen ◽  
Xin Feng Guo ◽  
Jing Xiao Lu
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Raman Spectra ◽  
Rapid Thermal Annealing ◽  
Glass Substrate ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Method ◽  
Hydrogenated Amorphous ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950°C for 5 min. The thin film made by RTA was smoothly and perfect structure.

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