Crystallization of Hydrogenated Amorphous Silicon by Rapid Thermal Method

2010 ◽  
Vol 428-429 ◽  
pp. 444-446 ◽  
Author(s):  
Rui Min Jin ◽  
Ding Zhen Li ◽  
Lan Li Chen ◽  
Xin Feng Guo ◽  
Jing Xiao Lu
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Raman Spectra ◽  
Rapid Thermal Annealing ◽  
Glass Substrate ◽  
Hydrogenated Amorphous Silicon ◽  
Thermal Method ◽  
Hydrogenated Amorphous ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950°C for 5 min. The thin film made by RTA was smoothly and perfect structure.

Rapid thermal annealing of hydrogenated amorphous silicon grown at low temperature

1987 ◽  
Vol 62 (4) ◽  
pp. 1425-1428 ◽  
Author(s):  
P. Fiorini ◽  
I. Haller ◽  
J. J. Nocera ◽  
S. A. Cohen ◽  
M. H. Brodsky
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

Research on Quantum State in Fabricating Poly-Si Films

2010 ◽  
Vol 428-429 ◽  
pp. 540-543
Author(s):  
Rui Min Jin ◽  
Lan Li Chen ◽  
Peng Hui Luo ◽  
Xin Feng Guo ◽  
Jing Xiao Lu
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Quantum State ◽  
Rapid Thermal Annealing ◽  
Glass Substrate ◽  
Quantum States ◽  
Silicon Films ◽  
Si Films ◽  
Electronic Microscope

Amorphous silicon films prepared by PECVD on glass substrate have been crystallized by rapid thermal annealing (RTA). By means of micro-Raman scattering and scanning electronic microscope (SEM), the quantum states in these processions are found and discussed.

Hydrogenated Nanocrystalline Silicon Thin Film Transistor Array for X-ray Detector Application

2008 ◽  
Vol 1066 ◽  
Author(s):  
Kyung-Wook Shin ◽  
Mohammad R. Esmaeili-Rad ◽  
Andrei Sazonov ◽  
Arokia Nathan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Amorphous Selenium ◽  
Breakdown Field ◽  
Storage Capacitor ◽  
X Ray ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) has strong potential to replace the hydrogenated amorphous silicon (a-Si:H) in thin film transistors (TFTs) due to its compatibility with the current industrial a-Si:H processes, and its better threshold voltage stability [1]. In this paper, we present an experimental TFT array backplane for direct conversion X-ray detector, using inverted staggered bottom gate nc-Si:H TFT as switching element. The TFTs employed a nc-Si:H/a-Si:H bilayer as the channel layer and hydrogenated amorphous silicon nitride (a-SiNx) as the gate dielectric; both layers deposited by plasma enhanced chemical vapor deposition (PECVD) at 280°C. Each pixel consists of a switching TFT, a charge storage capacitor (Cpx), and a mushroom electrode which serves as the bottom contact for X-ray detector such as amorphous selenium photoconductor. The chemical composition of the a-SiNx was studied by Fourier transform infrared spectroscopy. Current-voltage measurements of the a-SiNx film demonstrate that a breakdown field of 4.3 MV/cm.. TFTs in the array exhibits a field effect mobility (μEF) of 0.15 cm2/V·s, a threshold voltage (VTh) of 5.71 V, and a subthreshold leakage current (Isub) of 10−10 A. The fabrication sequence and TFT characteristics will be discussed in details.

Performance of thin hydrogenated amorphous silicon thin‐film transistors

1991 ◽  
Vol 69 (4) ◽  
pp. 2339-2345 ◽  
Author(s):  
J. Kanicki ◽  
F. R. Libsch ◽  
J. Griffith ◽  
R. Polastre
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous
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