High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond

Two new regiospecific biphenyl end-capped bithiazole co-oligomers, BP2Tz(in) and BP2Tz(out), showed high hole mobilities of 3.5 and 0.4 cm2 V−1 s−1, respectively, in thin film field effect transistors.

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High-performance local back gate thin-film field-effect transistors using sorted carbon nanotubes on an amino-silane treated hafnium oxide surface

Semiconductor Science and Technology ◽

10.1088/0268-1242/26/7/075002 ◽

2011 ◽

Vol 26 (7) ◽

pp. 075002 ◽

Cited By ~ 5

Author(s):

K C Narasimhamurthy ◽

Roy Paily

Keyword(s):

Thin Film ◽

Carbon Nanotubes ◽

Hafnium Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Oxide Surface ◽

Back Gate ◽

Amino Silane

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High performance n-channel thin-film field-effect transistors based on angular-shaped naphthalene tetracarboxylic diimides

Organic Electronics ◽

10.1016/j.orgel.2013.08.015 ◽

2013 ◽

Vol 14 (11) ◽

pp. 2859-2865 ◽

Cited By ~ 6

Author(s):

Shan-Ci Chen ◽

Dhanavel Ganeshan ◽

Dongdong Cai ◽

Qingdong Zheng ◽

Zhigang Yin ◽

...

Keyword(s):

Thin Film ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors

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High-performance C60 and picene thin film field-effect transistors with conducting polymer electrodes in bottom contact structure

Organic Electronics ◽

10.1016/j.orgel.2009.01.006 ◽

2009 ◽

Vol 10 (3) ◽

pp. 432-436 ◽

Cited By ~ 30

Author(s):

Yumiko Kaji ◽

Ryoji Mitsuhashi ◽

Xuesong Lee ◽

Hideki Okamoto ◽

Takashi Kambe ◽

...

Keyword(s):

Thin Film ◽

Conducting Polymer ◽

Field Effect ◽

High Performance ◽

Contact Structure ◽

Field Effect Transistors ◽

Bottom Contact ◽

Polymer Electrodes

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Thin Film Diamond Field Effect Transistors For High Power Applications

MRS Proceedings ◽

10.1557/proc-483-63 ◽

1997 ◽

Vol 483 ◽

Cited By ~ 2

Author(s):

Hui Jin Looi ◽

Lisa Ys Pang ◽

Richard B. Jackman

Keyword(s):

Thin Film ◽

High Power ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Schottky Diodes ◽

Film Material ◽

Near Surface ◽

Suitable Material ◽

P Type

AbstractEarly predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper commercially accessible polycrystalline thin film diamond has been turned p-type by the incorporation of near surface hydrogen. Schottky diodes and metal-semiconductor FETs (MESFETs) have been fabricated using this approach which display unprecedented performance levels; diodes with a rectification ratio > 106, leakage currents < l nA, no indication of reverse bias breakdown at 100V and an ideality factor of 1.1 have been made. Simple MESFET structures that are capable of withstanding VDS values of 100V with low leakage and current saturation (pinch-off) characteristics have also been fabricated. Predictions based upon experiments performed on these devices suggest that optimised device structures will be capable of operation at power levels up to 20 W/mm, implying that thin film diamond may after all be an interesting material for power applications.

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