Sol-gel preparation of La-doped bismuth ferrite thin film and its low-temperature ferromagnetic and ferroelectric properties

2013 ◽  
Vol 31 (1) ◽  
pp. 60-64 ◽  
Author(s):  
Fuxue YAN ◽  
Gaoyang ZHAO ◽  
Na SONG
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Bismuth Ferrite ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Preparation ◽  
La Doped

Characterization of Plzt on Platinum Electrodes for High Density Fram Application

1996 ◽  
Vol 446 ◽  
Author(s):  
YongSoo Choi ◽  
SooDoo Choe ◽  
SeungHyun Kim ◽  
ChangEun Kim ◽  
DooYoung Yang
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Stable State ◽  
Chelating Agent ◽  
Platinum Electrodes ◽  
Grain Sizes ◽  
Plzt Thin Film ◽  
La Doped

AbstractA new sol‐gel route to obtain PLZT thin film was developed by combining the advantage of 2‐methoxyethanol as a solvent and acetylacetone as a chelating agent. The sol maintained the same stable state as that of fresh synthesized sol even after 60 days of aging. The PLZT films spin coated onto a Pt/Ti/SiO2 substrate with 15% Pb excess and 7.5% La added sol showed well developed rosette microstructure of uniform grain sizes(0.3 ‐ 0.5 μm) and gave well behaved ferroelectric properties with the values of Ps, Pr, and Ec of 40 μC/cm2, 15 μ C/cm2, and 20 kV/cm respectively at 5V after 650 °C and above annealing. The degradation in polarization of 2.5% La doped PLZT thin film was found to be less than 20% up to 1012 cycles

scholarly journals Sol–Gel PMMA–ZrO2 Hybrid Layers as Gate Dielectric for Low-Temperature ZnO-Based Thin-Film Transistors

ACS Omega ◽  
2017 ◽  
Vol 2 (10) ◽  
pp. 6968-6974 ◽  
Author(s):  
Clemente G. Alvarado-Beltrán ◽  
Jorge L. Almaral-Sánchez ◽  
Israel Mejia ◽  
Manuel A. Quevedo-López ◽  
Rafael Ramirez-Bon
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Sol Gel ◽  
Hybrid Layers

La-doped effect on the ferroelectric properties of Bi4Ti3O12–SrBi4Ti4O15 thin film fabricated by pulsed laser deposition

2002 ◽  
Vol 92 (9) ◽  
pp. 5420-5424 ◽  
Author(s):  
J. S. Zhu ◽  
D. Su ◽  
X. M. Lu ◽  
H. X. Qin ◽  
Y. N. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
La Doped

Sol–gel preparation of Li+ ion conductive thin film

2002 ◽  
Vol 189 (3-4) ◽  
pp. 300-306 ◽  
Author(s):  
Kazunori Takada ◽  
Kenjiro Fujimoto ◽  
Taro Inada ◽  
Akihisa Kajiyama ◽  
Masaru Kouguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Li Ion ◽  
Gel Preparation

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

2010 ◽  
Vol 10 (1) ◽  
pp. 45-50 ◽  
Author(s):  
K. K. Banger ◽  
Y. Yamashita ◽  
K. Mori ◽  
R. L. Peterson ◽  
T. Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film ◽  
On Chip

Structural, Magnetic, and Ferroelectric Properties in Ion-Doped BiFeO3 Ceramics

2011 ◽  
Vol 687 ◽  
pp. 391-395
Author(s):  
Shu Xia Zhang ◽  
Yan Wei Ma
Keyword(s):  
Ferroelectric Properties ◽  
Sol Gel ◽  
Structural Phase ◽  
Magnetic Hysteresis ◽  
Synthesis Method ◽  
Secondary Phase ◽  
Rare Earth Ion ◽  
La Doping ◽  
Auto Combustion ◽  
La Doped

Rare-earth ion La is doped at the bismuth site in BiFeO3 to produce Bi0.8La0.2FeO3 polycrystalline ceramics via a sol-gel auto-combustion synthesis method. For comparison, the similar experiments are also carried out for the non-doped BiFeO3 at the same time. It is found that both non-doped and La doped BiFeO3 are composed of nanoscale crystallites (~50 nm). Furthermore, La doping suppresses the formation of the secondary phase and leads to a structural phase transition from a rhombohedral to an orthorhombic or a pseudotetragonal structure. More importantly, the magnetic and ferroelectric properties in La doped ceramics were both enhanced, as evidenced by the typical electric and magnetic hysteresis loops. These property evolutions can be attributed to the elimination of the secondary phase and the structural distortion caused by La doping.

Facile sol–gel preparation of nanocrystal embedded thin film material for memory device

2012 ◽  
Vol 24 (1) ◽  
pp. 423-430 ◽  
Author(s):  
Chi-Chang Wu ◽  
Yi-Jen Tsai ◽  
Pin-Lin Liu ◽  
Wen-Luh Yang ◽  
Fu-Hsiang Ko
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Memory Device ◽  
Film Material ◽  
Thin Film Material ◽  
Gel Preparation
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