Characterization of Plzt on Platinum Electrodes for High Density Fram Application

1996 ◽  
Vol 446 ◽  
Author(s):  
YongSoo Choi ◽  
SooDoo Choe ◽  
SeungHyun Kim ◽  
ChangEun Kim ◽  
DooYoung Yang
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Stable State ◽  
Chelating Agent ◽  
Platinum Electrodes ◽  
Grain Sizes ◽  
Plzt Thin Film ◽  
La Doped

AbstractA new sol‐gel route to obtain PLZT thin film was developed by combining the advantage of 2‐methoxyethanol as a solvent and acetylacetone as a chelating agent. The sol maintained the same stable state as that of fresh synthesized sol even after 60 days of aging. The PLZT films spin coated onto a Pt/Ti/SiO2 substrate with 15% Pb excess and 7.5% La added sol showed well developed rosette microstructure of uniform grain sizes(0.3 ‐ 0.5 μm) and gave well behaved ferroelectric properties with the values of Ps, Pr, and Ec of 40 μC/cm2, 15 μ C/cm2, and 20 kV/cm respectively at 5V after 650 °C and above annealing. The degradation in polarization of 2.5% La doped PLZT thin film was found to be less than 20% up to 1012 cycles

Synthesis of WO3 Electrochromic Sensor by Sol-Gel Method and Characterization of Its Electrochemical and Optical Properties

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Xrd Pattern ◽  
Starting Solution ◽  
Oxide Crystal ◽  
Heat Treated ◽  
Coating Method ◽  
Dip Coating Method

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

La-doped effect on the ferroelectric properties of Bi4Ti3O12–SrBi4Ti4O15 thin film fabricated by pulsed laser deposition

2002 ◽  
Vol 92 (9) ◽  
pp. 5420-5424 ◽  
Author(s):  
J. S. Zhu ◽  
D. Su ◽  
X. M. Lu ◽  
H. X. Qin ◽  
Y. N. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
La Doped

Characterization of SiO2 Thin Film Obtained by the Sol-Gel Route from TEOS and Triton X45

Langmuir ◽  
1995 ◽  
Vol 11 (10) ◽  
pp. 3970-3974 ◽  
Author(s):  
P. Piaggio ◽  
A. Bottino ◽  
G. Capannelli ◽  
E. Carosini ◽  
A. Julbe
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Sio2 Thin Film

Structural and Vibrational Properties of Ferroelectric Pb1-xSrxTiO3 Thin Films and Powders

2002 ◽  
Vol 748 ◽  
Author(s):  
M. Jain ◽  
A. Savvinov ◽  
P. S. Dobal ◽  
S. B. Majumder ◽  
R. S. Katiyar ◽  
...  
Keyword(s):  
Thin Films ◽  
Soft Mode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Vibrational Properties ◽  
X Ray Diffraction ◽  
Phase Transition Temperatures ◽  
Induced Changes ◽  
Pst System

ABSTRACTIn this work we present the structural, and vibrational properties of ferroelectric Pb1-xSrxTiO3 (PST). Thin films of PST were prepared by using sol-gel technique for various compositions with x values ranging from 0.0–1.0. Respective compositions were also prepared in ceramic and powder forms using sol-gel and solid-state reaction methods. X-ray diffraction was used for the structural characterization of these materials. Raman spectroscopy was utilized to study the phases and lattice vibrational modes, especially the soft mode in PST compositions. The temperature dependence of the soft mode frequency for different PST compositions revealed that the phase transition temperatures increased with increasing Pb contents in PST system. Ferroelectric properties of the films were correlated with the substitution-induced changes in the material.

Sol–gel synthesis and characterization of Ag2S nanocrystallites in silica thin film glasses

1999 ◽  
Vol 9 (11) ◽  
pp. 2893-2898 ◽  
Author(s):  
Lidia Armelao ◽  
Paolo Colombo ◽  
Monica Fabrizio ◽  
Silvia Gross ◽  
Eugenio Tondello
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Synthesis And Characterization ◽  
Silica Thin Film ◽  
Sol Gel Synthesis

Structural, Magnetic, and Ferroelectric Properties in Ion-Doped BiFeO3 Ceramics

2011 ◽  
Vol 687 ◽  
pp. 391-395
Author(s):  
Shu Xia Zhang ◽  
Yan Wei Ma
Keyword(s):  
Ferroelectric Properties ◽  
Sol Gel ◽  
Structural Phase ◽  
Magnetic Hysteresis ◽  
Synthesis Method ◽  
Secondary Phase ◽  
Rare Earth Ion ◽  
La Doping ◽  
Auto Combustion ◽  
La Doped

Rare-earth ion La is doped at the bismuth site in BiFeO3 to produce Bi0.8La0.2FeO3 polycrystalline ceramics via a sol-gel auto-combustion synthesis method. For comparison, the similar experiments are also carried out for the non-doped BiFeO3 at the same time. It is found that both non-doped and La doped BiFeO3 are composed of nanoscale crystallites (~50 nm). Furthermore, La doping suppresses the formation of the secondary phase and leads to a structural phase transition from a rhombohedral to an orthorhombic or a pseudotetragonal structure. More importantly, the magnetic and ferroelectric properties in La doped ceramics were both enhanced, as evidenced by the typical electric and magnetic hysteresis loops. These property evolutions can be attributed to the elimination of the secondary phase and the structural distortion caused by La doping.

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